Calculation of ternary and quaternary III–V phase diagrams

Stringfellow, G. B.

doi:10.1016/0022-0248(74)90416-3

Cited by 304 publications

(102 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…For calculating the water activity we have used the well-known equation obtained from the equality of chemical H 2 O potentials in pure solid ice and non-ideal liquid solution [34,35]:…”

Section: Calculation Of Water Excess Functionsmentioning

confidence: 99%

“…Then, other researchers [34,35] calculated the dependencies d ln γ nano−cluster /dx nano−cluster , (according to the classical Gibbs-Duhem differential equation) also numerically and at the end by numerical integration the dependencies ln γ nano−cluster (x nano−cluster ) were calculated. As a result, as was previously expected, gigantic positive deviations of the solution from ideality for the functions ln γ nano−cluster were obtained ln γ nano−cluster ≈ n(10 0 -10 1 ) (see Table 1 and Fig.…”

Section: Calculation Of Water Excess Functionsmentioning

confidence: 99%

“…This technique has often been used for the thermodynamic description of binary and multicomponent systems with different physicochemical nature, such as: electrolyte solutions [26][27][28][29], non-electrolyte (semiconductor) melts [30][31][32][33] [34][35][36]. If one takes only one term in the decomposition for the binary system (corresponding to the invariant second virial coefficient), see later equation (4) well-known strictly regular solutions model -RSM, is realized.…”

Section: Virial Decomposition Asymmetric Model -Vd-asmentioning

confidence: 99%

See 2 more Smart Citations

Cryometry data and excess thermodynamic functions in the binary system: water soluble bis-adduct of light fullerene C70 with lysine. Assymmetrical thermodynamic model of virtual gibbs energy decomposition - VD-AS

Чарыков¹,

Semenov²,

Keskinov³

et al. 2017

Nanosystems: Phys. Chem. Math.

View full text Add to dashboard Cite

The temperature of water-ice crystallization initiation decreases (∆T) were determined in the binary water solutions of water soluble derivative of light fullerene C 70 with amino-acid lysine at 272.99 -273.15 K. Partial molar excess functions for H 2 O were calculated. For the thermodynamic description of our systems, we have elaborated an original semi-empirical model VD-AS (Virial Decomposition Asymmetric Model), based on the virial decomposition of the molar Gibbs energy of the component molar fractions in the solution. With the help of the VD-AS model, partial molar functions of nano-clusters were calculated. Excess and full average Gibbs energies for the solutions and miscibility gaps concentration regions (with the help of diffusional instability equations) were calculated. Thus, the VD-AS model excellently describes pre-delamination or micro-heterogeneous-structure formation in the considered solutions. These calculations were accordingly confirmed by dynamic light scattering data.

show abstract

“…For calculating the water activity we have used the well-known equation obtained from the equality of chemical H 2 O potentials in pure solid ice and non-ideal liquid solution [34,35]:…”

Section: Calculation Of Water Excess Functionsmentioning

confidence: 99%

Section: Calculation Of Water Excess Functionsmentioning

confidence: 99%

Section: Virial Decomposition Asymmetric Model -Vd-asmentioning

confidence: 99%

See 1 more Smart Citation

Cryometry data and excess thermodynamic functions in the binary system: water soluble bis-adduct of light fullerene C70 with lysine. Assymmetrical thermodynamic model of virtual gibbs energy decomposition - VD-AS

Чарыков¹,

Semenov²,

Keskinov³

et al. 2017

Nanosystems: Phys. Chem. Math.

View full text Add to dashboard Cite

show abstract

“…Sur le Tableau 2, nous avons rassembl~, pour chaque 6chantillon analys6 5. la sonde de Castaing, les distances interr6ticulaires et les param6trcs de maille a qu'elles impliquent. Les m6mes mesures pour le substrat donnent a=5,4504 (6) A, valeur en excellent accord (Stringfellow, 1974: Mariette, Bourneix & Marbeuf, 1976, alors qu'un comportement id6al se serait traduit par une variation lin6aire du volume de la maille.…”

Section: R/~sultatsunclassified

Détermination précise de la composition de couches epitaxiées Ga_1−xIn_xP (0≤x≤0,10)

Etcheberry¹,

Marbeuf²,

Rommeluere³

et al. 1980

J Appl Cryst

View full text Add to dashboard Cite

show abstract

“…Arsenic is known to be easily incorporated into InP layers. 22,23 A value of the total amount of strain incorporated into the InP barriers can be obtained by assuming that the Ga concentration of samples A1 and A2 is equal to the Ga concentration x Ga ϭ0.50 of GaInAs bulk layers grown under the same growth conditions.…”

Section: Influence Of the Growth Parameters On The As Incorporatiomentioning

confidence: 99%

X-ray interference effect as a tool for the structural investigation of GaInAs/InP multiple quantum wells

Marschner

Brubach

Verschuren

et al. 1998

Journal of Applied Physics

View full text Add to dashboard Cite

We present x-ray diffraction (XRD) investigations of the structure of nominally lattice-matched GaInAs/InP multiple quantum well (MQW) structures grown by chemical beam epitaxy (CBE). To obtain information about the individual MQW layers and the interface structure we make use of the x-ray interference effect between two layers of equal lattice constant but different layer thickness separated by ultrathin strained (interfacial) layers. This effect predicted by the dynamical diffraction theory provides a powerful tool to quantitatively investigate ultrathin single quantum well structures and monolayer thin interfaces as well as MQW structures. For a given switching sequence during CBE growth, we determine the interface structure of GaInAs/InP MQW structures within the limits given by XRD theory. Additionally we found that an As gradient from the GaInAs quantum well layers into the InP barrier layers is present. The influence of the substrate off-orientation, the growth rate, and the group V flux in the InP barriers on the total amount of strain incorporated into the InP layers is shown. The obtained results indicate that the mechanism of As incorporation into InP layers is similar to the mechanism observed for the As incorporation into (qua)ternary GaxIn1−xAsyP1−y layers.

show abstract

Calculation of ternary and quaternary III–V phase diagrams

Cited by 304 publications

References 0 publications

Cryometry data and excess thermodynamic functions in the binary system: water soluble bis-adduct of light fullerene C70 with lysine. Assymmetrical thermodynamic model of virtual gibbs energy decomposition - VD-AS

Cryometry data and excess thermodynamic functions in the binary system: water soluble bis-adduct of light fullerene C70 with lysine. Assymmetrical thermodynamic model of virtual gibbs energy decomposition - VD-AS

Détermination précise de la composition de couches epitaxiées Ga_1−xIn_xP (0≤x≤0,10)

X-ray interference effect as a tool for the structural investigation of GaInAs/InP multiple quantum wells

Contact Info

Product

Resources

About

Calculation of ternary and quaternary III–V phase diagrams

Cited by 304 publications

References 0 publications

Cryometry data and excess thermodynamic functions in the binary system: water soluble bis-adduct of light fullerene C70 with lysine. Assymmetrical thermodynamic model of virtual gibbs energy decomposition - VD-AS

Cryometry data and excess thermodynamic functions in the binary system: water soluble bis-adduct of light fullerene C70 with lysine. Assymmetrical thermodynamic model of virtual gibbs energy decomposition - VD-AS

Détermination précise de la composition de couches epitaxiées Ga1−xInxP (0≤x≤0,10)

X-ray interference effect as a tool for the structural investigation of GaInAs/InP multiple quantum wells

Contact Info

Product

Resources

About

Détermination précise de la composition de couches epitaxiées Ga_1−xIn_xP (0≤x≤0,10)