Détermination précise de la composition de couches epitaxiées Ga_1−xIn_xP (0≤x≤0,10)

Abstract

The chemical composition of Gax -xlnxP (0 < x < 0.10) alloys epitaxially grown on GaP substrates has been determined by electron microprobe analysis and by lattice-parameter measurement (a). The a(x) calibration curve follows Vegard's law which confirms the regular character of the solid solution and the existence of strain relaxation in the epitaxial layers.