Determination of the nitrogen doping of liquid phase epitaxy GaP and GaxIn1−xP alloys by optical absorption and photoluminescence

Abstract

Optical absorption and photoluminescence have been used to determine the nitrogen concentration in liquid phase epitaxy GaP and GaxIn1−xP layers. Both methods give the same variation of nitrogen concentration. The same nitrogen maximum concentration of [N]=8×1017 cm−3 has been found in GaP and in Ga0.998In0.002 grown at 900 °C and PNH3>10−3 atm. In InGaxIn1−xP, it has been shown that the nitrogen concentration incorporated in the layer decreases as the indium amount increases for indium concentrations less than 5%, in samples prepared with identical growth conditions.

Effect of n--layer thickness on green-light-emitting efficiency in nitrogen-doped GaP grown by liquid phase epitaxy

“…The intensity distributions of the A and NN 1 lines along the surface are shown in figure 4. The nitrogen concentration, [N], can be determined from the intensity ratio I NN1 /I A measured in low-temperature luminescence [5]:…”