Basics of MIS-type gas sensors with thin nanoporous silicon

Abstract

This paper presents a model of the electrical transport in MIS structure of metal -thin nanoporous silicon-p-Si. The obtained analytical expressions allow analyzing the contribution of the porous silicon and surface electronic states to the electrical behavior of the structure at gas adsorption. The parameters of surface electronic states for different porous silicon thickness are obtained from analysis of experimental I-V curves and DLTS spectra. The high sensitive hydrogen sensor operated at T room based on MIS structure with porous silicon layer is considered.

The Mechanism of Metal-Assisted Etching of Silicon

“…However, for porous silicon, such a situation is not realized. It was established that for porous silicon, Φ b is only weakly dependant on Φ M , and, as shown previously, the material parameters of porous silicon are more important factors affecting the properties of the M-PSi contacts (Scheen et al 2012;Skryshevsky 2014). Therefore, I-V characteristics differ significantly from the ideal behavior and the more general I-V relation with the ideality factor (n) is applicable.…”

“…In addition, the porous silicon has a very large effective surface area and, consequently, a large concentration of dangling bonds that may act as the high concentration of carrier traps in PS (Remaki et al 2003;Skryshevsky 2014). Therefore, the porous layers with high resistance impart a major contribution to the large value of dynamic series resistance of the metal/PSi/c-Si/metal structure.…”

Features of photoluminescence and transmission spectra of thin film porous silicon layers on insulator substrates

“…Пористий кремній наразі активно використовується в електроніці та сенсориці, як антивідбиваюче покриття для фотоелементів, матеріал для виготовлення світлодіодів, чутливе покриття для УФ-датчиків та різноманітних сенсорів [3], [4].…”

Hydrogen Peroxide Measurements by MISFET and LET Structures with Rear Porous Silicon Layer and Metallic Nanoparticles

“…On the other hand use of porous silicon increase active area surface and porous layer by itself can be used as detection structure of the sensor [6]- [12]. In this work, a combination of two nanostructuresporous silicon and metal nanoparticles was used in the aim to determine best combination and technological process for hydrogen peroxide sensor formation.…”