The Mechanism of Metal-Assisted Etching of Silicon

doi:10.1201/b19342-18

Cited by 1 publication

(3 citation statements)

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“…For CF 4 plasmas, both a dopant-based electronic mechanism and a defect-based mechanism could together act to curtail the activity of Ru. Induced defects could also affect the Si/Ru band bending (which are important in MacEtch mechanisms , ), induce internal stresses, or lead to local suppression of electric fields.…”

Section: Discussionmentioning

confidence: 99%

“…The MacEtch mechanisms for non-gold catalysts are not fully understood and continue to be an area of active research. There is a need for further experiments and theory to build a complete understanding of the mechanisms with the goal of controlling porosity during MacEtch . While some preliminary studies exist in the Au MacEtch area, ,, , a complete understanding of the mechanisms to enable optimal MacEtch for other catalysts is still lacking.…”

Section: Discussionmentioning

confidence: 99%

“…There is a need for further experiments and theory to build a complete understanding of the mechanisms with the goal of controlling porosity during MacEtch. 65 While some preliminary studies exist in the Au MacEtch area, 37,66,67 , a complete understanding of the mechanisms to enable optimal MacEtch for other catalysts is still lacking. Such future research could include the effects of various MacEtch parameters on silicon porosity such as silicon−catalyst interface properties for hole transfer, etchant concentration and mass transport, and catalyst plasma pretreatment.…”

Section: ■ Discussionmentioning

confidence: 99%

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Ruthenium-Assisted Chemical Etching of Silicon: Enabling CMOS-Compatible 3D Semiconductor Device Nanofabrication

Mallavarapu

Ajay

Barrera

et al. 2020

ACS Appl. Mater. Interfaces

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The semiconductor industry’s transition to three-dimensional (3D) logic and memory devices has revealed the limitations of plasma etching in reliable creation of vertical high aspect ratio (HAR) nanostructures. Metal-assisted chemical etch (MacEtch) can create ultra-HAR, taper-free nanostructures in silicon, but the catalyst used for reliable MacEtchgoldis not CMOS (complementary metal–oxide–semiconductor)-compatible and therefore cannot be used in the semiconductor industry. Here, for the first time, we report a ruthenium MacEtch process that is comparable in quality to gold MacEtch. We introduce new process variablescatalyst plasma pretreatment and surface areato achieve this result. Ruthenium is particularly desirable as it is not only CMOS-compatible but has also been introduced in semiconductor fabrication as an interconnect material. The results presented here remove a significant barrier to adoption of MacEtch for scalable fabrication of 3D semiconductor devices, sensors, and biodevices that can benefit from production in CMOS foundries.

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Section: Discussionmentioning

confidence: 99%