Atomic-level quantized reaction of HfO<sub>x</sub> memristor

Syu, Yong-En; Chang, Ting‐Chang; Lou, Jie-Chung; Tsai, Tsung‐Ming; Chang, Kuan‐Chang; Tsai, Ming-Jinn; Wang, Ying-Lang; Liu, Ming; Sze, Simon M.

doi:10.1063/1.4802821

Cited by 107 publications

(71 citation statements)

References 24 publications

(23 reference statements)

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“…Hence, the existence of Schottky emission can be ascertained by fitting to two functions, which are: (i) ln(J/T 2 ) ∝ 1/T under fixed electric field; and (ii) ln(J) ∝ E 1/2 under fixed temperature. There are numerous published resistive switching devices that suggested Schottky emission as the dominant conduction mechanism, such as [33][34][35][36][37][38][39][40][41][42], etc. The combination of electrodes and materials of these works is listed in Table 3.…”

Section: Schottky Emissionmentioning

confidence: 99%

“…While CF evolution is typically associated with thermal, electrical or ion migration [19,20], there is no consensus on the dominant conduction mechanism in resistive switching memory devices [21][22][23]. Among the commonly observed conduction mechanisms are: (i) Poole-Frenkel emission [24][25][26][27][28][29][30][31][32]; (ii) Schottky emission [33][34][35][36][37][38][39][40][41][42]; (iii) SCLC [43][44][45][46][47][48][49][50][51][52][53] (iv) trap-assisted tunneling [54][55][56][57][58][59]; and (v) hopping conduction [60][61][62][63][64][65]. To enhance the device performance and data retention property, it is crucial to identifying t...…”

Section: Introductionmentioning

confidence: 99%

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Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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Section: Schottky Emissionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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“…In recent years, observation of quantized conductance discrete steps characterized by integer or half integer multiples of G 0 5 2e 2 /h has been reported in ECMs 8,[12][13][14][15][16][17][18] and VCMs. [19][20][21][22][23] While there is a few studies on the conductance quantization effect in TCMs, 14,24 we have reported that a conductive filament including a quantum point contact (QPC) can be formed in Pt/NiO/Pt RS cells. by initial voltage sweeping in the cells.…”

Section: Introductionmentioning

confidence: 99%

Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells

2017

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A resistive switching (RS) phenomenon, namely reversible transitions between the low and high resistance states after forming process, is caused by the formation and rupture of a conductive filament. We confirmed that conductive filaments including a quantum point contact (QPC) in Pt/NiO/Pt RS cells were formed by semiforming, the first step of the forming process. In this study, we examine correlation between microscopic structures in NiO layers and forming characteristics in the Pt/NiO/Pt cells. The appearance condition of the quantized conductance is considered to be associated with the composition ratio of O to Ni of either equivalent to or larger than a critical value. Furthermore, we proposed a RS model based on the forming characteristics especially obtained from the RS cells with different size. Defects which act as the source of a conductive filament including a QPC by semiforming may be randomly distributed in a NiO layer according to Poisson statistics.

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“…6) Among them, ReRAM is considered as one of the most suitable memories for next-generation applications because of its low power consumption, favorable scalability, excellent retention, simple structure, and high operation speed. [7][8][9][10] Numerous materials have been developed for use as the resistive layer in ReRAM. [11][12][13] Among them, polymer materials are strong resistive layer candidates owing to their thermal stability, chemical resistance, mechanical strength, flexibility, and simple production process.…”

Section: Introductionmentioning

confidence: 99%

Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film

Hsiao

You

et al. 2017

Jpn. J. Appl. Phys.

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We have developed an organic-based resistive random access memory (ReRAM) by using spin-coated polyimide (PI) as the resistive layer. In this study, the chain distance and number of chain stacks of PI molecules are investigated. We employed different solid contents of polyamic acid (PAA) to synthesize various PI films, which served as the resistive layer of ReRAM, the electrical performance of which was evaluated. By tuning the PAA solid content, the intermolecular interaction energy of the PI films is changed without altering the molecular structure. Our results show that the leakage current in the high-resistance state and the memory window of the PI-based ReRAM can be substantially improved using this technique. The superior properties of the PI-based ReRAM are ascribed to fewer molecular chain stacks in the PI films when the PAA solid content is decreased, hence suppressing the leakage current. In addition, a device retention time of more than 10 7 s can be achieved using this technique. Finally, the conduction mechanism in the PI-based ReRAM was analyzed using hopping and conduction models.

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Atomic-level quantized reaction of HfO_x memristor

Cited by 107 publications

References 24 publications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells

Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film

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Atomic-level quantized reaction of HfOx memristor

Cited by 107 publications

References 24 publications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells

Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film

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Atomic-level quantized reaction of HfO_x memristor