Atomic layer deposition of molybdenum oxide using bis(tert-butylimido)bis(dimethylamido) molybdenum

Bertuch, Adam; Sundaram, Ganesh; Saly, Mark J.; Moser, Daniel F.; Kanjolia, Ravi

doi:10.1116/1.4843595

Cited by 58 publications

(93 citation statements)

References 9 publications

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“…The set temperature of the substrate table was varied between 50 and 350 C. The temperature of the reactor wall was maintained at 100 C, for all depositions, except for depositions at a table temperature of 50 C, for which the wall temperature was set to 50 C. The liquid (N t Bu) 2 (NMe 2 ) 2 Mo precursor (98%, Strem Chemicals) was contained in a bubbler at 50 C, at which it is reported to have a vapor pressure of 0.13 Torr. 21 The chemical structure of the precursor can be seen in the inset of Fig. 1.…”

Section: Experiments a Film Depositionmentioning

confidence: 99%

“…More recently, Bertuch et al reported an ALD process to deposit MoO x using bis(tert-butylimido)-bis(dimethylamido)-molybdenum, (N t Bu) 2 (NMe 2 ) 2 Mo, as the metal-organic precursor and ozone as reactant. 21 This process promisingly shows a high growth per cycle (GPC) of $1.3 Å at 300 C, but suffers from a low GPC and from C and N contamination in the films at lower deposition temperatures of 150-200 C.…”

Section: Introductionmentioning

confidence: 99%

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Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma

Vos

Macco

Thissen

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

119

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Molybdenum oxide (MoOx) films have been deposited by atomic layer deposition using bis(tert-butylimido)-bis(dimethylamido)molybdenum and oxygen plasma, within a temperature range of 50–350 °C. Amorphous film growth was observed between 50 and 200 °C at a growth per cycle (GPC) around 0.80 Å. For deposition temperatures of 250 °C and higher, a transition to polycrystalline growth was observed, accompanied by an increase in GPC up to 1.88 Å. For all deposition temperatures the O/Mo ratio was found to be just below three, indicating the films were slightly substoichiometric with respect to MoO3 and contained oxygen vacancies. The high purity of the films was demonstrated in the absence of detectable C and N contamination in Rutherford backscattering measurements, and a H content varying between 3 and 11 at. % measured with elastic recoil detection. In addition to the chemical composition, the optical properties are reported as well.

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Section: Experiments a Film Depositionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma

Vos

Macco

Thissen

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

119

View full text Add to dashboard Cite

show abstract

“…al. [8] ure5). While the 2 second O 2 plasma process shows no sub band gap absorption the additional Argon plasma step leads to small, wide sub band gap absorption in the MoO x layers the.…”

Section: Resultsmentioning

confidence: 99%

“…Although the hole-selective conductivity mechanism through the MoO x /(i)a-Si:H/(n)c-Si stack is not fully understood in detail, it is influenced by the defect state density in the MoO x as well as the MoO x layer thickness itself [3] [4]. For depositing very thin (<10 nm), conformal oxides on structured silicon surfaces atomic layer depostion (ALD) is due to its reaction-limited growth process an ideal candidate [5].Thermal ALD recipes for MoO x are recently reported by different groups, but up to now non of these MoO x layers are tested as emitter alternative in SHJ solar cells [6][7] [8].…”

Section: Introductionmentioning

confidence: 99%

Plasma-enhanced atomic-layer-deposited MoO x emitters for silicon heterojunction solar cells

et al. 2015

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A method for the deposition of molybdenum oxide (MoO x ) with high growth rates at temperatures below 200• C based on plasma-enhanced atomic layer deposition (PE-ALD) is presented. The stoichiometry of the of the over-stoichiometric MoO x films can be adjusted by the plasma-parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction (SHJ) solar cells are presented and discussed.

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“…There are two molybdenum precursors reported for MoO 3 : C 12 H 30 N 4 Mo [57] and Mo(CO) 6 [58]. Likewise there were two kind of tungsten precursors used for WO 3 : W(CO) 6 [59][60][61] and W 2 (NMe 2 ) 6 [62].…”

Section: Atomic Layer Depositon (Ald)mentioning

confidence: 99%

Technologies for deposition of transition metal oxide thin films: application as functional layers in “Smart windows” and photocatalytic systems

Gesheva

Ivanova

Bodurov

et al. 2016

J. Phys.: Conf. Ser.

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Abstract. "Smart windows" are envisaged for future low-energy, high-efficient architectural buildings, as well as for the car industry. By switching from coloured to fully bleached state, these windows regulate the energy of solar flux entering the interior. Functional layers in these devices are the transition metals oxides. The materials (transitional metal oxides) used in smart windows can be also applied as photoelectrodes in water splitting photocells for hydrogen production or as photocatalytic materials for self-cleaning surfaces, waste water treatment and pollution removal. Solar energy utilization is recently in the main scope of numerous world research laboratories and energy organizations, working on protection against conventional fuel exhaustion. The paper presents results from research on transition metal oxide thin films, fabricated by different methods -atomic layer deposition, atmospheric pressure chemical vapour deposition, physical vapour deposition, and wet chemical methods, suitable for flowthrough production process. The lower price of the chemical deposition processes is especially important when the method is related to large-scale glazing applications. Conclusions are derived about which processes are recently considered as most prospective, related to electrochromic materials and devices manufacturing. Transition metal oxidesTransition metal oxides (TMO) are claimed to be one of the most interesting classes of solids, exhibiting varieties of properties, structures and applications [1]. Their properties are determined by the unique nature of their outer d-electrons. Transition-metal oxides can be insulators, semiconductors, metals, or undergo semiconductor-metal transitions. Transition metal oxides possess unusual and useful electronic, optical and magnetic properties. Many of these properties strongly depend on materials defects like vacancies, dislocations, stacking faults and grain boundaries [2].

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Atomic layer deposition of molybdenum oxide using bis(tert-butylimido)bis(dimethylamido) molybdenum

Cited by 58 publications

References 9 publications

Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma

Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma

Plasma-enhanced atomic-layer-deposited MoO x emitters for silicon heterojunction solar cells

Technologies for deposition of transition metal oxide thin films: application as functional layers in “Smart windows” and photocatalytic systems

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