We present a unified theory for wave-packet dynamics of electrons in crystals subject to perturbations varying slowly in space and time. We derive the wave-packet energy up to the first order gradient correction and obtain all kinds of Berry-phase terms for the semiclassical dynamics and the quantization rule. For electromagnetic perturbations, we recover the orbital magnetization energy and the anomalous velocity purely within a single-band picture without invoking inter-band couplings. For deformations in crystals, besides a deformation potential, we obtain a Berry-phase term in the Lagrangian due to lattice tracking, which gives rise to new terms in the expressions for the wave-packet velocity and the semiclassical force. For multiple-valued displacement fields surrounding dislocations, this term manifests as a Berry phase, which we show to be proportional to the Burgers vector around each dislocation.

Atomic layer deposition (ALD) is a technique capable of producing ultrathin conformal films with atomic level control over thickness. A major drawback of ALD is its low deposition rate, making ALD less attractive for applications that require high throughput processing. An approach to overcome this drawback is spatial ALD, i.e., an ALD mode where the half-reactions are separated spatially instead of through the use of purge steps. This allows for high deposition rate and high throughput ALD without compromising the typical ALD assets. This paper gives a perspective of past and current developments in spatial ALD. The technology is discussed and the main players are identified. Furthermore, this overview highlights current as well as new applications for spatial ALD, with a focus on photovoltaics and flexible electronics.

Molybdenum trioxide films have been deposited using thermal atomic layer deposition techniques with bis(tert-butylimido)bis(dimethylamido)molybdenum. Films were deposited at temperatures from 100 to 300 °C using ozone as the oxidant for the process. The Mo precursor was evaluated for thermal stability and volatility using thermogravimetric analysis and static vapor pressure measurements. Film properties were evaluated with ellipsometry, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and secondary electron microscopy. The growth rate per cycle was determined to extend from 0.3 to 2.4 Å/cycle with <4% nonuniformity (1-sigma) with-in-wafer across a 150 mm wafer for the investigated temperature range.

Recent advances in the field of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have indicated that atomic layer deposition (ALD) of the metal oxide and subsequent sulfidation could offer a method for the synthesis of large area two-dimensional materials such as MoS2 with excellent layer control over the entire substrate. However, growing large area oxide films by ALD with sub 1 nm nucleation coalescence remains a significant challenge, and the necessary steps are unexplored. In this work, we demonstrate the necessary process improvements required to achieve sub 1 nm nucleation control by characterization of nucleation domains formed by oxide deposition. Synthesis of the TMD MoS2 from sulfidation of oxide deposited by both thermal ALD from (tBuN)2(NMe2)2Mo and O3 and plasma enhanced ALD (PEALD) from (tBuN)2(NMe2)2Mo and remote O2 plasma was performed. Large uniform MoS2 areas were achieved by optimizing the effects of various growth process conditions and surface treatments on the ALD nucleation and growth of Mo-oxide and the postsulfidation of MoS2. In addition to insights into the control of the oxide deposition, film chemistry analysis during a multistep sulfidation based on less toxic sulfur as compared to H2S was performed for several temperature profiles revealing sulfur incorporation and molybdenum reduction at low temperatures but higher temperatures required for 2H crystal structure formation. The knowledge gained of the ALD, PEALD, and postsulfidation was leveraged to demonstrate tunable film thickness and centimeter-scale monolayer growth. Material quality can be studied independently of the MoS2 layer count as demonstrated by the control of the monolayer photoluminescence intensity by the temperature ramp rate during sulfidation.

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