Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition

Poodt, Paul; Cameron, D.C.; Dickey, Eric; George, Steven M.; Кузнецов, В. И.; Parsons, Gregory N.; Roozeboom, F.; Sundaram, Ganesh; Vermeer, Ad

doi:10.1116/1.3670745

Cited by 313 publications

(263 citation statements)

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“…As especially ALD is a low-throughput process, the gain of capacitance density in three-dimensional capacitors, which need a highly conformal deposition process, is opposed by the increasing cost of these deposition processes. One possible way out of this dilemma is the use of batch ALD 3 or spatial ALD 35 processes with a significantly higher throughput than single-wafer ALD processes. Also AVD processes have higher throughput than ALD, but with drawbacks in conformality, which however can be sufficient for some applications.…”

Section: Resultsmentioning

confidence: 99%

Dielectric Material Options for Integrated Capacitors

Ruhl

Lehnert

Lukosius³

et al. 2014

ECS J. Solid State Sci. Technol.

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Ruhl, G., Lehnert, W., Lukosius, M., Wenger, C., Baristiran Kaynak, C., Blomberg, T., ... Rushworth, S. A. (2014). Dielectric material options for integrated capacitors. ECS Journal of Solid State Science and Technology, 3(8), N120-N125. DOI: 10.1149/2.0101408jss General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Download date: 11. May. 2018 Science and Technology, 3 (8) N120-N125 (2014) 2162-8769/2014/3(8) Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor deposition) process techniques. In this study eight dielectric materials, which can be deposited by these techniques and exhibit the potential to reach k-values of over 50 were identified, prepared and characterized as single films and stacked film systems. To primarily focus on a material comparison, preliminary processes were used for film deposition on planar test devices. Measuring leakage current density versus the dielectric constant k shows that at low voltages (≤1 V) dielectrics with k-values up to 100 satisfy the typical leakage current density specification of <10 −7 A/cm 2 for MIM capacitors. At higher voltages (3 V) this specification is only fulfilled for dielectrics with k-values below 45. As a consequence, the maximum achievable capacitance gain by introducing high-k dielect...

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Section: Resultsmentioning

confidence: 99%

Dielectric Material Options for Integrated Capacitors

Ruhl

Lehnert

Lukosius³

et al. 2014

ECS J. Solid State Sci. Technol.

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“…ALD was first published under the name molecular layering in the early 1960s by Professor 17 . The remaining drawback of conventional ALD that prevents it from cost-effective commercial use is the low deposition rate, but this shortcoming has been largely overcome by the launch of spatial atmospheric ALD 5 . Cu-and Li-diffusion barrier layers 15,21 Abbreviation: ALD, atomic layer deposition; MOS, metal-oxide-semiconductor.…”

Section: Thin-film Depositionmentioning

confidence: 99%

“…ALD This technique is used to deposit films in an atomic layer-bylayer manner 4,5 , which enables the deposition of notably thin pinhole-free layers of high quality. ALD was first published under the name molecular layering in the early 1960s by Professor 17 .…”

Section: Thin-film Depositionmentioning

confidence: 99%

Precision in harsh environments

2016

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Microsystems are increasingly being applied in harsh and/or inaccessible environments, but many markets expect the same level of functionality for long periods of time. Harsh environments cover areas that can be subjected to high temperature, (bio)-chemical and mechanical disturbances, electromagnetic noise, radiation, or high vacuum. In the field of actuators, the devices must maintain stringent accuracy specifications for displacement, force, and response times, among others. These new requirements present additional challenges in the compensation for or elimination of cross-sensitivities. Many state-of-the-art precision devices lose their precision and reliability when exposed to harsh environments. It is also important that advanced sensor and actuator systems maintain maximum autonomy such that the devices can operate independently with low maintenance. The next-generation microsystems will be deployed in remote and/or inaccessible and harsh environments that present many challenges to sensor design, materials, device functionality, and packaging. All of these aspects of integrated sensors and actuator microsystems require a multidisciplinary approach to overcome these challenges. The main areas of importance are in the fields of materials science, micro/nano-fabrication technology, device design, circuitry and systems, (first-level) packaging, and measurement strategy. This study examines the challenges presented by harsh environments and investigates the required approaches. Examples of successful devices are also given.

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“…64 Spray-pyrolysis can also be used in a continuous process, although the precursors need to be heated to relatively high temperatures. 65 AALD (or spatial ALD) can be upscaled to a continuous roll-to-roll process, and has the distinct advantage of producing uniform, conformal thin films over large areas in openatmosphere at relatively low temperatures of 120-150 • C. 21,22,35 However, AALD is limited by the need to have highly reactive liquid precursors for the metal oxides. These are typically expensive, pyrophoric organometallic precursors.…”

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confidence: 99%

“…20 But unlike sol-gel deposition, ALD (like MOCVD) is limited because of the need for vacuum-processing, which restricts the size of the substrates, increases the total deposition time, and increases the processing complexity and cost. 18,21,22 Also, organometallic precursors, which are often expensive and pyrophoric, are typically used in MOCVD or ALD. 22 Sol-gel is advantageous over these two techniques because it involves air-processing using non-pyrophoric precursors, in addition to providing greater flexibility in producing films with new compositions due to the simplicity of the process.…”

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confidence: 99%

Research Update: Doping ZnO and TiO2 for solar cells

Hoye¹,

Musselman²,

MacManus‐Driscoll³

2013

APL Materials

101

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ZnO and TiO2 are two of the most commonly used n-type metal oxide semiconductors in new generation solar cells due to their abundance, low-cost, and stability. ZnO and TiO2 can be used as active layers, photoanodes, buffer layers, transparent conducting oxides, hole-blocking layers, and intermediate layers. Doping is essential to tailor the materials properties for each application. The dopants used and their impact in solar cells are reviewed. In addition, the advantages, disadvantages, and commercial potential of the various fabrication methods of these oxides are presented.

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Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition

Cited by 313 publications

References 45 publications

Dielectric Material Options for Integrated Capacitors

Dielectric Material Options for Integrated Capacitors

Precision in harsh environments

Research Update: Doping ZnO and TiO2 for solar cells

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