A method for the deposition of molybdenum oxide (MoO x ) with high growth rates at temperatures below 200• C based on plasma-enhanced atomic layer deposition (PE-ALD) is presented. The stoichiometry of the of the over-stoichiometric MoO x films can be adjusted by the plasma-parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction (SHJ) solar cells are presented and discussed.
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