Three experiments investigated visual search for singleton feature targets. The critical dimension on which the target differed from the nontargets was either known in advance or unknown-that is, the critical difference varied either within a dimension or across dimensions. Previous work (Treisman, 1988) had shown that, while the search reaction time (RT) functions were flat in both conditions, there was an intercept cost for the cross-dimension condition. Experiment 1 examined whether this cost would disappear when responses could be based on the detection of any (targetnontarget) difference in the display (by requiring a "heterogeneity/homogeneity" decision). The cost remained. This argues that pop-out requires (or involves) knowledge of the particular dimension in which an odd-one-out target differs from the nontargets; furthermore, that knowledge is acquired through the elimination of dimensions not containing a target. In Experiment 2, the subjects had to eliminate (or ignore) one potential source of difference in order to give a positive response (displays could contain a "noncritical" difference requiring a negative response). The result was a comparatively large cost in the within-dimension (positive) condition. This can be taken to indicate that popout as such does not make available information as to the particular feature value in which the target differs from the nontargets. Experiment 3 examined whether search priorities can be biased in accordance with advance knowledge of the likely source of difference. The subjects were found to have a high degree of top-down control over what particular dimension to assign priority of checking to. The implication of the results for models of visual search and selection are discussed.Much recent research in visual perception has attempted to understand how humans detect a (usually known) target stimulus in a background of nontargets (distractors; see, e.g., Cave & Wolfe, 1990; Treisman & Gelade, 1980; Treisman & Sato, 1990;Wolfe, 1994). This work has used the analysis of reaction times (RTs) as a function of the number of items in the display (the display size) as its major tool. Two different patterns of RT/ display size functions are typically observed. Which pattern is found depends on the nature ofthe target and nontarget stimuli. When the search involves a target that differs from nontargets in a single salient feature (e.g., a vertical line amongst horizontal lines), the search RT functions are flat, supporting the notion that targets are detected by a spatially parallel process. In contrast, when the target is defined by a conjunction offeatures, each of which is separately present among the nontarget items (e.g., a red X among red Os and greenXs), the search RT functions are linearly increasing and the slope ratios between target absent and present responses are approximately 2: 1. This pattern has been taken as indicative of a spatially serial search process, where search is exhaustive on absent trials and self-terminates upon detecting a target on pr...

Deep subwavelength integration of high-definition plasmonic nanostructures is of key importance in the development of future optical nanocircuitry for high-speed communication, quantum computation and lab-on-a-chip applications. To date, the experimental realization of proposed extended plasmonic networks consisting of multiple functional elements remains challenging, mainly because of the multi-crystallinity of commonly used thermally evaporated gold layers. This can produce structural imperfections in individual circuit elements that drastically reduce the yield of functional integrated nanocircuits. In this paper we demonstrate the use of large (>100 μm(2)) but thin (<80 nm) chemically grown single-crystalline gold flakes that, after immobilization, serve as an ideal basis for focused ion beam milling and other top-down nanofabrication techniques on any desired substrate. Using this methodology we obtain high-definition ultrasmooth gold nanostructures with superior optical properties and reproducible nano-sized features over micrometre-length scales. Our approach provides a possible solution to overcome the current fabrication bottleneck and realize high-definition plasmonic nanocircuitry.

LT) can be achieved for weakly absorbed photons with energies close to the absorption edge of silicon. [ 15 ] These properties of b-Si are particularly useful for photovoltaic applications.The limiting effi ciency of a solar cell is given by the detailed balance of absorption and radiative recombination [ 16 ] and by nonradiative processes like Auger-and impurity recombination. [17][18][19] b-Si can help to approach those limits in two ways. On the one hand b-Si improves the coupling of light into the solar cell and the absorption of near band edge photons. This in turn increases the short circuit current and on a logarithmic scale also the open circuit voltage. On the other hand, due to excellent light-trapping properties b-Si might also allow reducing the solar cell thickness substantially below 100 µm while sustaining a high light absorption. This reduces nonradiative bulk recombination losses that scale linearly with the solar cell thickness [ 17,18 ] and hence, increases the open-circuit voltage. Of course, reducing the solar cell thickness also increases the cost effi ciency. Decreasing the amount of required silicon feedstock is a major industry concern as can be seen by the growing interest in kerf-free crystalline silicon solar cell technologies. [20][21][22] Unfortunately, besides bulk effects, surface recombination imposes a very critical limit to the solar This article presents an overview of the fabrication methods of black silicon, their resulting morphologies, and a quantitative comparison of their optoelectronic properties. To perform this quantitative comparison, different groups working on black silicon solar cells have cooperated for this study. The optical absorption and the minority carrier lifetime are used as benchmark parameters. The differences in the fabrication processes plasma etching, chemical etching, or laser processing are discussed and compared with numerical models. Guidelines to optimize the relevant physical parameters, such as the correlation length, optimal height of the nanostructures, and the surface defect densities for optoelectronic applications are given.

Nanowires with helical surface states represent key prerequisites for observing and exploiting phase-coherent topological conductance phenomena, such as spin-momentum locked quantum transport or topological superconductivity. We demonstrate in a joint experimental and theoretical study that gated nanowires fabricated from high-mobility strained HgTe, known as a bulk topological insulator, indeed preserve the topological nature of the surface states, that moreover extend phase-coherently across the entire wire geometry. The phase-coherence lengths are enhanced up to 5 µm when tuning the wires into the bulk gap, so as to single out topological transport. The nanowires exhibit distinct conductance oscillations, both as a function of the flux due to an axial magnetic field, and of a gate voltage. The observed h/e-periodic Aharonov-Bohm-type modulations indicate surface-mediated quasi-ballistic transport. Furthermore, an in-depth analysis of the scaling of the observed gate-dependent conductance oscillations reveals the topological nature of these surface states. To this end we combined numerical tight-binding calculations of the quantum magneto-conductance with simulations of the electrostatics, accounting for the gate-induced inhomogenous charge carrier densities around the wires. We find that helical transport prevails even for strongly inhomogeneous gating and is governed by flux-sensitive high-angular momentum surface states that extend around the entire wire circumference. arXiv:1708.07014v2 [cond-mat.mes-hall]