Atomic layer deposition of molybdenum oxide from (N<i>t</i>Bu)2(NMe2)2Mo and O2 plasma

Vos, Martijn F. J.; Macco, Bart; Thissen, Nfw Nick; Bol, Ageeth A.; Kessels, Wmm Erwin

doi:10.1116/1.4930161

Cited by 120 publications

(90 citation statements)

References 39 publications

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“…All of the results just mentioned were achieved using thermally evaporated MoO x . Low-temperature ALD of MoO x has also been demonstrated and is particularly promising for applications in SHJ solar cells due to its scalability and lowtemperature processing compatibility with a-Si:H passivation layers [95], [108]. However, so far, evaporated MoO x has been shown to yield a larger amount of band bending than ALD MoO x and thus an enhanced hole selectivity [109], [110].…”

Section: B Transition Metal Oxidesmentioning

confidence: 99%

Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

Melskens

Loo

Macco

et al. 2018

IEEE J. Photovoltaics

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254

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DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal. If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement:

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Section: B Transition Metal Oxidesmentioning

confidence: 99%

Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

Melskens

Loo

Macco

et al. 2018

IEEE J. Photovoltaics

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313

254

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“…The Mo (W) precursor employed was [(NtBu) 2 (NMe 2 ) 2 Mo] ([(NtBu) 2 (NMe 2 ) 2 W]), (98%, Strem Chemicals) and was contained in a stainless-steel canister which was heated to 50°C. At this temperature, the vapor pressure of the precursor is reported to be 0.13 Torr [38]. The delivery lines were kept at 90°C to avoid condensation of the precursor while the reactor walls were heated to 50°C.…”

Section: Thin Film Growthmentioning

confidence: 99%

Large area, patterned growth of 2D MoS₂ and lateral MoS₂–WS₂ heterostructures for nano- and opto-electronic applications

Sharma

Mahlouji

et al. 2020

Nanotechnology

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2020). Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano-and opto-electronic applications. Nanotechnology, 31(25), [255603]. https://doi. AbstractThe patterned growth of transition metal dichalcogenides (TMDs) and their lateral heterostructures is paramount for the fabrication of application-oriented electronics and optoelectronics devices. However, the large scale patterned growth of TMDs remains challenging. Here, we demonstrate the synthesis of patterned polycrystalline 2D MoS 2 thin films on device ready SiO 2 /Si substrates, eliminating any etching and transfer steps using a combination of plasma enhanced atomic layer deposition (PEALD) and thermal sulfurization. As an inherent advantage of ALD, precise thickness control ranging from a monolayer to fewlayered MoS 2 has been achieved. Furthermore, uniform films with exceptional conformality over 3D structures are obtained. Finally, the approach has been leveraged to obtain in-plane lateral heterostructures of 2D MoS 2 and WS 2 thin films over a large area which opens up an avenue for their direct integration in future nano-and opto-electronic device applications.Supplementary material for this article is available online

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“…This is not uncommon for ALD, and enhanced GPC values on crystalline surfaces have for example also been observed for MoOx and TiO2. [21][22][23] In fact, from AFM (Figures S1 and S2 in the supplementary material) it is deduced that the crystallites can protrude up to ~25 nm from the surface. Since the film is 75 nm thick, this suggests an enhancement in GPC of at least 33% on the crystalline surface, if the crystallites were to nucleate directly at the start of the film deposition.…”

Section: A Influence Of the Deposition Temperature On Film Crystallimentioning

confidence: 99%

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

Macco

Verheijen

Black

et al. 2016

Journal of Applied Physics

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Document VersionAccepted manuscript including changes made at the peer-review stage Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTHydrogen-doped indium oxide (In2O3:H) has emerged as a highly transparent and conductive oxide, finding its application in a multitude of optoelectronic devices. Recently, we have reported on an atomic layer deposition (ALD) process to prepare high quality In2O3:H. This process consists of ALD of In2O3:H films at 100 o C, followed by a solid phase crystallization step at 150-200 o C. In this work, we report on a detailed electron microscopy study of this crystallization process which reveals new insights into the crucial aspects for achieving the large grain size and associated excellent properties of the material. The key finding is that the best optoelectronic properties are obtained by preparing the films at the lowest possible temperature prior to post-deposition annealing. Electron microscopy imaging shows that such films are mostly amorphous, but feature a very low density of embedded crystallites. Upon post-deposition annealing, crystallization proceeds merely from isotropic crystal grain growth of these embedded crystallites rather than by the formation of additional crystallites. The

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Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma

Cited by 120 publications

References 39 publications

Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

Large area, patterned growth of 2D MoS₂ and lateral MoS₂–WS₂ heterostructures for nano- and opto-electronic applications

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

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Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma

Cited by 120 publications

References 39 publications

Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

Large area, patterned growth of 2D MoS2 and lateral MoS2–WS2 heterostructures for nano- and opto-electronic applications

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

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Large area, patterned growth of 2D MoS₂ and lateral MoS₂–WS₂ heterostructures for nano- and opto-electronic applications