Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system

Abstract

In this paper, we report the effect of annealing time on the properties of copper indium diselenide CuInSe 2 films. The CuInSe 2 thin films have been grown at room temperature by electrochemical deposition technique using two electrodes system. The as deposited films were annealed under argon atmosphere at 300 o C during 15, 30, 45 and 60 min. The structural and morphological properties of the resulting films were characterized respectively by means of x-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical band gap was estimated from transmittance measurements. We have found, that after annealing, all films present CuInSe 2 in its chalcopyrite structure and with preferred orientation along <112> direction. The film annealed during 45 min exhibits better crystallinity and excellent optical properties. The SEM pictures show that the elaborated films have a uniform surface morphology with a homogeneity distribution of crystallites, the grain became higher in size with prolongation of annealing time; it lays in the range of 195 to 515Å.

Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe2and InSe2Targets

“…The d( 112) increased rapidly at annealing temperatures ≥ 300°C. The better crystallinity was obtained by a decrease in the number of crystallographic-rearrangement-induced structural defects and internal stresses [23]. This is in agreement with the grain sizes of the RTA-treated CIS thin films in the inset in Fig.…”

Growth and characterization of chalcopyrite CuInSe2 nanoparticles

“…The characteristic diffraction peaks for full series of CIS can be designated corresponding to plane (112), (103), (204/220), (116/312), (400) and (316/332) according to JCPDS 23-209 [21]. In addition, peaks of other impurities such as Se JCPDS 24-714 [22] and CuSe JCPDS 49-1456 [23] have been also detected. XRD spectra show a weak peak in first two low temperature synthesized CIS-1 and CIS-2.…”

FABRICAÇÃO DE FILMES FINOS DE CuInSe2 POR ELETRODEPOSIÇÃO PARA FABRICAÇÃO DE CÉLULAS FOTOVOLTAICA

“…Os espectros abaixo mostram picos de difração de três filmes CIS com características morfológicas equivalentes às da amostra 7a (Bouraiou A et al, 2009) com as mesmas concentrações de Cu e In, e uma variação gradual de Se. Nos espectros abaixo, as amostras com menor concentração de selênio (CIS_1) apresenta maior cristalinidade.…”