Present study is motivated by interesting attainment obtained for copper indium gallium diselenide compound as a light absorbing material for thin-film solar cell. Formation of copper indium gallium diselenide nanostructures via solvothermal method using starting precursors of copper, indium, gallium salts, and selenium powder is represented. Preparation is done by varying x (0.1 and 0.3) in CuIn 1-x Ga x Se 2 compound at a constant temperature and using ethanolamine as a solvent. Characterization of nanostructures is done using powder X-ray diffraction, scanning electron microscopy, dynamic light scattering, Fourier transform infrared spectroscopy, and UV-Vis spectroscopy. It is found that grown chalcopyrite structure at different x, possess agglomeration in nanostructures. Results indicate that presence of 10 % gallium in copper indium gallium diselenide compound leads to the single-phase growth, prepare at the temperature of 190°C for 19 h.

This work presents growth and characterization of copper indium diselenide (CuInSe 2 ) nanoparticles with controllable size synthesized by a simple solvothermal process. Salts of copper(I), indium(III) and selenium powder have been used as starting precursors and ethylenediamine is used as a solvent. Nanoparticles synthesized at different temperatures have been analyzed using X-ray diffraction and transmission electron microscopy. Particle size has been calculated by dynamic light scattering. Surface morphology has also been studied by scanning electron microscopy. Optical properties of CuInSe 2 provide band gap in the range of 0.94-1.05 eV, which are nearly close to optimal intensity for solar radiation suitable for solar cell devices.

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Now a day, copper indium gallium diselenide (CIGS) have earned special interest among thin film solar cells. The bandgap of CIGS can be varied by varying gallium composition to obtain required bandgap that meets the solar spectrum to absorb most of the photons. In present work, ITO/Mo/CIGS/CdS/ZnO/Al heterojunction thin film cell has been designed by computer simulation using AFROS-HET. The cell parameters like open circuit voltage (Voc), short circuit current (Isc), efficiency (η) and fillfactor is also evaluated under AM 1.5 radiation by keeping device temperature at 400K. The Electrical, Photoelectroluminescence characteristics and Quantum efficiency of the cell are also simulated.

The compound belongs to I-III-VI2 group are promising material as an effective light-absorbing materials. Now a day, ternary chalcopyrite semiconductors, especially copper based I-III-VI2 semiconductors have attracted many investigators. They have several desirable features as absorbers in the thin film solar cells. In present work, copper indium (di) selenide have been prepared via solvothermal route. Several methods have been reported to prepare CuInSe2 nanostructures by solution route. In present work, tetragonal chalcopyrite copper indium (di) selenide nanorods has been synthesized by solvothermal method using ethylene diamine as a solvent. Structural analysis had been done by X-ray diffraction (XRD). The surface morphology of the as-grown nanorod has been studied using scanning electron microscopy. The bandgap of as grown nanorods is obtained from UV-Vis spectrum which will applicable to the solar cell devices.