Analytical Modelling and Simulation of Triple Material Quadruple Gate Tunnel Field Effect Transistors

Abstract

We build up the electrostatic model for Triple Material Quadruple Gate (TMQG) Tunnel Field Effect Transistor of rectangular cross area, in view of semi 3D strategy in this paper. The Parabolic approximation method is utilized to tackle the 2-D Poisson condition with appropriate device boundary conditions and logical articulations for surface potential and electric fields are determined. The electric field dispersion is additionally used to ascertain the tunneling generation rate. The created show furnishes the plan rules of TMQG with enhanced IONcurrent. The diagnostic outcomes are contrasted and TCAD recreation comes about.

An Analytical Modeling and Simulation of Surrounding Gate TFET with an Impact of Dual Material Gate and Stacked Oxide for Low Power Applications

“…With the help of parabolic approximation technique (2) and arbitrary constants (12), equation ( 1) is solved for two different metals as,…”

“…Analytical models would be beneficial to furnish fast results and allow circuit simulations, as properly as supply a further perception on the working principle of the devices. In our previous works, the analytical expressions of potential, electric field and drain current for Quadruple gate TFET [12], Halo TFET [13] and SG TFET [14] has been studied in order to improve the ON current characteristics. However, the ON current ION of TFET has not achieved notable level of CMOS technology.…”