Center Potential Based Analysis of Si and III-V Gate all around Field Effect Transistors (GAA-FETs)

Verma, Yogesh Kumar; Gupta, Santosh Kumar

doi:10.1007/s12633-020-00559-2

Cited by 10 publications

(2 citation statements)

References 28 publications

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“…The III-V channel material based multi-gate eld effect transistor represents the recent committing technology for very high power, high temperature, high frequency, and high linear conditions [8] [9] [10]. The scaling down the size of eld effect transistors (FETs) also introduces short-channel effects (SCEs), that can be mitigated by enhanced gate control over the channel [11]. The international technology roadmap for semiconductors (ITRS) roadmap also depicts the fact that for sub 100 nm device sizes the multiple gate MOSFETs are to be used due to reduced SCEs [12] [13].…”

Section: Introductionmentioning

confidence: 99%

Comparative Analysis of Different Figures of Merit for AlGaN/GaN and Si Surrounding-Gate Field Effect Transistors (SG-FETs)

Verma

Mishra

Adhikari

et al. 2021

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The combination of better transport properties of III-V group semiconductors along with excellent electrostatic control of surrounding gate is a promising option for the future low power electronics. Accordingly in this brief, the major gures of merit (FOM) including output current, output conductance (g d ), transconductance generation factor (TGF), intrinsic gain (dB), and dynamic power dissipation are computed for surrounding-gate eld effect transistors (SG-FETs) considering III-V group semiconductors and Si channel material respectively with respect to different device parameters. It is noticed that the center potential is higher in AlGaN/GaN SG-FET than Si for different values of channel length (CL), channel height (H), oxide thickness (t ox ), and doping concentration (N d ). The AlGaN/GaN SG-FET provides lower g d than Si for different values of CL, H, t ox , and N d as required for MOS analog circuits to achieve higher gain. The peak value of TGF and intrinsic gain is higher in AlGaN/GaN than Si SG-FET for different values of CL, H, t ox , and N d . In this work, we have analyzed the MOSFET structure for normally off operation of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce dynamic power dissipation (P D ). The magnitude of P D is calculated to be lower in normally off AlGaN/GaN SG-FET than Si for different values of CL, H, and t ox .

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Section: Introductionmentioning

confidence: 99%

Comparative Analysis of Different Figures of Merit for AlGaN/GaN and Si Surrounding-Gate Field Effect Transistors (SG-FETs)

Verma

Mishra

Adhikari

et al. 2021

Silicon

Self Cite

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Comparative Analysis of Different Figures of Merit for Algan/Gan and Si Surrounding-Gate Field Effect Transistors (SG-Fets)

Verma

Mishra

Adhikari

et al. 2021

Preprint

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The combination of better transport properties of III-V group semiconductors along with excellent electrostatic control of surrounding gate is a promising option for the future low power electronics. Accordingly in this brief, the major figures of merit (FOM) including output current, output conductance (gd), transconductance generation factor (TGF), intrinsic gain (dB), and dynamic power dissipation are computed for surrounding-gate field effect transistors (SG-FETs) considering III-V group semiconductors and Si channel material respectively with respect to different device parameters. It is noticed that the center potential is higher in AlGaN/GaN SG-FET than Si for different values of channel length (CL), channel height (H), oxide thickness (tox), and doping concentration (Nd). The AlGaN/GaN SG-FET provides lower gd than Si for different values of CL, H, tox, and Nd as required for MOS analog circuits to achieve higher gain. The peak value of TGF and intrinsic gain is higher in AlGaN/GaN than Si SG-FET for different values of CL, H, tox, and Nd. In this work, we have analyzed the MOSFET structure for normally off operation of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce dynamic power dissipation (PD). The magnitude of PD is calculated to be lower in normally off AlGaN/GaN SG-FET than Si for different values of CL, H, and tox.

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Linearity Analysis of AlN/β-Ga2O3 HEMT for RFIC Design

Verma¹,

Mishra²,

Singh³

et al. 2022

HEMT Technology and Applications

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Center Potential Based Analysis of Si and III-V Gate all around Field Effect Transistors (GAA-FETs)

Cited by 10 publications

References 28 publications

Comparative Analysis of Different Figures of Merit for AlGaN/GaN and Si Surrounding-Gate Field Effect Transistors (SG-FETs)

Comparative Analysis of Different Figures of Merit for AlGaN/GaN and Si Surrounding-Gate Field Effect Transistors (SG-FETs)

Comparative Analysis of Different Figures of Merit for Algan/Gan and Si Surrounding-Gate Field Effect Transistors (SG-Fets)

Linearity Analysis of AlN/β-Ga2O3 HEMT for RFIC Design

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