Analysis of Poly Resistor Mismatch

Tan, Philip Beow Yew; Kordesch, A.V.; Sidek, Othman

doi:10.1109/smelec.2006.380795

Cited by 3 publications

(6 citation statements)

References 4 publications

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“…The device‐to‐device mismatch for poly resistors in a single wafer depends significantly on the width and length of the resistor. For 1 µm wide and 1 µm length resistor, the mismatch percentage can reach up to 10% [34, 47, 48]. Thus, if poly resistors are scaled down to nm range, the mismatch percentage will be huge.…”

Section: Conventional Flash Adc and Resistor Mismatch Effectmentioning

confidence: 99%

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On‐chip tunable Memristor‐based flash‐ADC converter for artificial intelligence applications

Humood

Mohammad

Abunahla

et al. 2020

IET Circuits, Devices & Systems

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This study presents a novel hybrid memristor (MR)-complementary metal-oxide-semiconductor-based flash analogue-to-digital converter (ADC). The speed and efficiency of the ADC are important aspects that can significantly affect the overall system performance. The flash ADC is considered the fastest type of ADCs; however, its performance is affected by the resistor mismatch. The proposed flash ADC is the first to use tunable MR to replace conventional resistor to generate accurate reference voltages. This is achieved by utilising the highly analogue behaviour observed in multi-state MR devices fabricated and tested by the authors' group. The electrical parameters of the devices have been extracted by device characterisation, then the voltage-threshold adaptive model (VTEAM) has been used to develop a correlated mathematical and Simulation Program with Integrated Circuit Emphasis (SPICE) device model. The proposed MR-based flash-ADC design solves the issue of resistor mismatch that results in encoding errors by the ability to tune the MR resistance value post-processing. Moreover, being a nanoscale component, the usage of MR significantly improves the area efficiency of the target ADC. Furthermore, the proposed design has improved the ADC transfer function characteristic and has lower differential non-linearity and integral non-linearity errors compared with the conventional design.

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Section: Conventional Flash Adc and Resistor Mismatch Effectmentioning

confidence: 99%

“…Hence, nanometre (nm)‐sized MRs can be used in the fabricated ADC. However, using nm‐sized poly resistors is not possible due to very high mismatch rates on the same wafer [34]. Additionally, the tuning feature of the MR will enable the use of low/high‐resistance ranges with the same MR device area.…”

Section: Introductionmentioning

confidence: 99%

On‐chip tunable Memristor‐based flash‐ADC converter for artificial intelligence applications

Humood

Mohammad

Abunahla

et al. 2020

IET Circuits, Devices & Systems

View full text Add to dashboard Cite

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“…These combinations, however, depend on matching properties. For poly resistors, [18,27] report a relative mismatch (3σ ) lower than 1 % for resistor values higher than 20 k and a width of at least 500 nm.…”

Section: Resistors In Standard Cmosmentioning

confidence: 99%

“…16) where the orthogonal coefficients are given by a n = 1 K n · b a w(t) · ϕ n (t)dt (A.17) and:K n = b a ϕ n (t) · ϕ n (t)dt (A. 18) and the range of n is over the integer values that correspond to the subscripts that where used to denote the orthogonal functions in the complete orthogonal set.…”

Section: A12 Periodic Waveformsmentioning

confidence: 99%

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Temperature- and Supply Voltage-Independent Time References for Wireless Sensor Networks

Smedt

Gielen

Dehaene

2015

Analog Circuits and Signal Processing

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A 66 $\mu$W 86 ppm$/^{\circ}$C Fully-Integrated 6 MHz Wienbridge Oscillator With a 172 dB Phase Noise FOM

Smedt

Wit

Vereecken

et al. 2009

IEEE J. Solid-State Circuits

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This paper presents the design of a new Wienbridge topology. Its phase noise performance, low temperature dependency and low power consumption make it suitable for use in wireless sensor nodes and time-based sensor readout circuitry. The noise as well as temperature behavior of the oscillator is explained using extensive calculations. Measurements on 7 samples of the same batch show a temperature stability of 86 ppm C and a measured spread of 0.9% at an oscillation frequency of 6 MHz. The circuit consumes 66 W and is realized in a 65 nm technology measuring 150 m by 200 m. The measured phase noise figure of merit is 172 dB at a frequency offset of 100 kHz.

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Analysis of Poly Resistor Mismatch

Cited by 3 publications

References 4 publications

On‐chip tunable Memristor‐based flash‐ADC converter for artificial intelligence applications

On‐chip tunable Memristor‐based flash‐ADC converter for artificial intelligence applications

Temperature- and Supply Voltage-Independent Time References for Wireless Sensor Networks

A 66 $\mu$W 86 ppm$/^{\circ}$C Fully-Integrated 6 MHz Wienbridge Oscillator With a 172 dB Phase Noise FOM

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