Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

Hydrogen-atom-mediated electrochemistry

“…Figure 2a presents the cyclic voltammograms recorded using an n þ -Si/SiO 2 electrode and the comparison of these voltammograms with that obtained using a glassy carbon (GC) electrode, in 0.1 M potassium phosphate buffer solution at pH 3. The electrochemical oxidation of Ru(NH 3 ) 6 2 þ at the n þ -Si/SiO 2 required a considerably higher overpotential than the GC electrode. The onset potential was observed at approximately þ 3.2 V (versus Ag/AgCl), and the current increased gradually as the potential increased in the positive direction.…”

“…In this work, we introduced thermally grown silicon dioxide (SiO 2 ), a dense and stable dielectric layer, and explored the novel phenomena that could be observed in this electrochemical system. Thermal SiO 2 is a dielectric material used for conventional metal/insulator/metal capacitors 6 , and SiO 2 films are widely used as gate insulators of metal/oxide/semiconductor (MOS) devices 7 , in which the field-induced drift of protons to the Si/SiO 2 interface and their interactions with electrons can create hydrogen (H) atoms at the interface 8,9 . Shkrob et al 10 demonstrated that protons were reduced to generate mobile H atoms in B 2 O 3 glasses at room temperature.…”

Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture for metal-insulator-metal capacitor applications

“…21 A positive value of α indicates the rise in capacitance density with applied voltage, which may be ascribed to the high degree of electric field polarization. 1,22,23 The capacitance values were measured with voltage sweep from -5 V to +5 V at temperatures 200 K, 300 K, and 400 K and at the frequencies of 10 kHz, 100 kHz and 1 MHz. Figure 2 shows the variation in VCC with CET at an ac signal frequency of 100 kHz for three different temperatures measured at zero bias voltage.…”

Characterization of Dielectric Relaxation and Reliability of High-k MIM Capacitor Under Constant Voltage Stress

“…In the last few years, laminate or sandwiched structures of MIM capacitor by adding Al 2 O 3 or SiO 2 layers have been studied to reduce the leakage current. However, it is known that MIM capacitors with high-k dielectric have many defects in the metal-insulator interface, which implies that the injected charges in the interface of high-k dielectric induce greater change of capacitor characteristics than those in the interface of conventional dielectric materials do [6]. These cause a large dependence of capacitance performance on applied voltage and temperature.…”