Characterization of Dielectric Relaxation and Reliability of High-k MIM Capacitor Under Constant Voltage Stress

Silicon nitride (Si3N4) due to its good mechanical and electrical properties is a promising material for wide range of applications, including exploitation under action of ionizing radiation. For estimating the changes of chemical bonds in silicon nitride nanolayers under action of ionizing radiation single and multi-layer silicon nitride nanolayered coatings on prepared Si subtrate were investigated by means of Fourier transform infrared spectrometry. Three main groups of signals were identified in both types of nanolayers, at 510 and 820 cm-1 and group of broad signals at 1000-1200 cm-1. Irradiation with accelerated electrons up to absorbed doses 36 MGy causes minor changes of signal intensities and position in spectra, showing to good radiation stability of the single and multi layered Si3N4 nanolayers.

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Characterization of Dielectric Relaxation and Reliability of High-k MIM Capacitor Under Constant Voltage Stress

Cited by 3 publications

References 14 publications

Ultra-smooth BaTiO3 surface morphology using chemical mechanical polishing technique for high-k metal-insulator-metal capacitors

Ultra-smooth BaTiO3 surface morphology using chemical mechanical polishing technique for high-k metal-insulator-metal capacitors

Dielectric Relaxation, Aging and Recovery in High-K MIM Capacitors

FTIR Analysis of Electron Irradiated Single and Multilayer Si<sub>3</sub>N<sub>4</sub> Coatings

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