An experimental study of integrated DMOS transistors with increased energy capability

Zawischka, Timo; Pfost, Martin; Ebli, Michael; Costachescu, Dragos

doi:10.1109/essderc.2013.6818827

Cited by 5 publications

(3 citation statements)

References 9 publications

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“…Neither technology changes nor external circuitry is needed. Part of this paper has already been discussed in [14] and [15]. This paper extends the results by additional simulations and experiments.…”

supporting

confidence: 64%

An Easily Implementable Approach to Increase the Energy Capability of DMOS Transistors

Zawischka

Pfost

Costachescu

2014

IEEE Trans. Electron Devices

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DMOS transistors are often subject to high power dissipation and thus substantial self-heating. This limits their safe operating area because very high device temperatures can lead to thermal runaway and subsequent destruction. Because the peak temperature usually occurs only in a small region in the device, it is possible to redistribute part of the dissipated power from the hot region to the cooler device areas. In this way, the peak temperature is reduced, whereas the total power dissipation is still the same. Assuming that a certain temperature must not be exceeded for safe operation, the improved device is now capable of withstanding higher amounts of energy with an unchanged device area. This paper presents two simple methods to redistribute the power dissipation density and thus lower the peak device temperature. The presented methods only require layout changes. They can easily be applied to modern power technologies without the need of process modifications. Both methods are implemented in test structures and investigated by simulations and measurements.Index Terms-DMOS transistor, integrated power technologies, peak temperature, power dissipation density, power metaloxide-semiconductor field-effect transistor (MOSFET), thermal behavior, thermal runaway.

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supporting

confidence: 64%

An Easily Implementable Approach to Increase the Energy Capability of DMOS Transistors

Zawischka

Pfost

Costachescu

2014

IEEE Trans. Electron Devices

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“…Costăchescu et al [1] uses a feedback circuit to control individual power densities according to temperatures measured by embedded sensors. Zawischka et al [2] modifies the chip layout by reduced source contact density or separated gates. Another way is to lower the temperature rise within the active transistor by incorporation of a thick Cu layer on top of the power device [3].…”

Section: Introductionmentioning

confidence: 99%

Optimization of energy capability in power semiconductor devices

Chen

Deckers

Sander

2014

Proceedings of the 5th Electronics System-Integration Technology Conference (ESTC)

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Trends in power semiconductor devices are towards high integration and high performance, which impose ever increasing demands on their energy capability. The purpose of this paper is to demonstrate possibilities for optimization of the energy capability by considering the stack of layers in the power device and system for automotive applications. We classify the operation profiles into 3 categories: short pulse e.g. load short circuits (~100µs); medium pulse e.g. bulb or motor inrush (~ms range); and continuous power as in steady state. We demonstrate the impact parameters for these three application categories, in particular addressing how they interact with each other. In the end, optimization guidelines are presented which enable designers to achieve high system performance.

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“…In spite of the very different temperature distributions, the peak temperatures are the same, as shown Fig.3 (temperature profile along the AA' cutline from Fig.1). While this situation may appear counterintuitive due to the higher power density, in the case of setup#2, a higher thermal capacitance is actually available, due to the Silicon volume of the disabled active area from the center of the device, where no power dissipation occurs [8]. It is important that the ambient temperature and the peak temperatures to be the same in both cases, because [1]- [3] state that the lifetime of power devices is directly proportional to these quantities.…”

Section: Dmos Transistors Were Thermo-mechanically Stressed Under Thementioning

confidence: 99%

Experimental Reliability Improvement of Power Devices Operated Under Fast Thermal Cycling

Simon

Boianceanu

Mey

et al. 2015

IEEE Electron Device Lett.

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An experimental study of integrated DMOS transistors with increased energy capability

Cited by 5 publications

References 9 publications

An Easily Implementable Approach to Increase the Energy Capability of DMOS Transistors

An Easily Implementable Approach to Increase the Energy Capability of DMOS Transistors

Optimization of energy capability in power semiconductor devices

Experimental Reliability Improvement of Power Devices Operated Under Fast Thermal Cycling

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