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4H-SiC Schottky Barrier Diodes (SBDs) with remarkable electrical performance have been fabricated and characterised. A barrier height about 1.64V and an ideality factor close to 1 are extracted from the forward characteristics measured at several temperatures. These essential Schottky contact parameters are observed to be constant with temperature. A temperature probe with a simple and innovative scheme is designed and applied. The probe uses SiC SBDs as temperature sensor in the 20-4000C range, with measured sensitivities varying from 1.3 mV/K to 2.8 mV/K. The probe is meant to monitorize the temperature inside the furnaces, in the cement industry.

DMOS transistors for power applications dissipate significant amount of energy, leading to substantial selfheating. Thus appears the necessity of DMOS characterization at high temperatures. In this paper we present a test structure, with integrated heating elements, used for device characterization up to 500ºC.

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Abstract-In automotive applications, the lifetime of the power transistors is limited by the number of power pulses, induced by, e.g., short-circuit or inductive clamping events. This letter presents a solution for reliability improvement of double-diffused metal-oxide-semiconductor transistors which operate under thermomechanical stresses generated during power cycling.

This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the dielectric thickness and relative permittivity on the diode’s electrical performance are investigated. Typical commercial drift layer parameters are used for this study. The extension of the space charge area throughout the drift region and the current distribution at breakdown are shown. The efficiency of the termination is also evaluated for both SiC and diamond diodes.

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