An ESFI sos magnetodiode

Abstract

Double injection of holes and electrons into an ESFI® SOS film is observed. As is common with magnetodiodes the application of transverse magnetic inductions influences the current–voltage characteristics due to the lifetime profile of the charge carriers across the film. From the dependence of the current on the magnetic induction it is possible to deduce the average bulk lifetime and the surface recombination velocity at the silicon–substrate interface as functions of the voltage. The lifetime is found to increase with voltage, while the surface recombination velocity decreases. These deductions reflect the additional increase in double injection over a certain voltage range and the appearance of magnetoconductance versus voltage extrema. Thus by means of the magnetodiode effect the recombination properties of an ESFI® SOS film may be checked.

Double injection in semiconductor layers in a transverse magnetic field

“…In conclusion it should be noted that the results obtained in the present paper should be taken into account when interpreting the experimental data presented e.g. in [ 5 ] , particularly for more accurate values of the recombination parameters obtained by fitting theoretical models to the experimental results.…”

Profiles of recombination and transport parameters in thin sos films

“…(1) Supplied by LETI, CEN Grenoble. of these phenomena being essentially governed by carrier recombination, the magnetodiode effect is then a precious tool for recombination parameter investigations [12,13].…”

Bases physiques et performances des nouveaux (micro)capteurs magnétiques à semiconducteur

“…Nous présentons ici l'effet de magnétoconcentration et son optimisation pour la réalisation de capteurs magnétiques, puis son extension au cas des magnétodiodes, initialement étudiées en URSS [11,23,24] et au Japon par la firme Sony [25], et pour lesquelles les technologies LSI et VLSI ont permis de développer plusieurs types de micro-capteurs intégrés, aussi testés en Allemagne (Siemens) [26], aux USA (Honeywell) [27] et en Suisse ((Landis et Gyr) [28]). Nous donnerons enfin les performances et les limites ultimes (tenue en température, bruit) que nous avons obtenues avec cette famille de capteurs.…”