A theory of double injection for thin semiconductor layers in a transverse magnetic field is developed. The fundamental equation in drift approximation is analyzed for the semiconductor and insulator regimes by introducing a parameter, i.e. the local effective carrier lifetime. As a result, expressions for the layer current‐voltage characteristics are obtained. For high fields they obey the laws J ∼ U and J ∼ U2, respectively, which accounts for high magnetosensitivity. With low fields applied and at different velocities of surface recombination in the layer the effect of polar magnetosensitivity is observed. The constant Lorentz force approximation is analyzed and compared with a more precise theory.
It is shown that the problem of the spatial distributions of the potential within a finite layer of semiconductor with two kinds of free carriers and any set of donor and acceptor impurities in the case when the degree of ionization is small may be reduced by means of the appropriate renormalization of the spatial coordinate to the identical problem for the intrinsic semiconductor, which has an exact solution. Stress is laid on the importance of Debye length and `generalized' Debye length in the analysis of such problems.
Theoretical investigations are made of the stationary double injection in a thin semiconductor layer, when it is simultaneously affected by monochromatic radiation and an external magnetic field. A fundamental two‐dimensional equation in drift approximation, that takes into account the injected space charge, recombination of charge carriers, and magnetic field quadratic effects are derived. The equation is solved for the semiconductor and insulator regimes, and expressions are found for the layer current‐voltage characteristics, which are analyzed for the cases of weak and strong light absorption. It is shown that in the latter case for magnetic fields of opposite directions there can exist a difference in magnetosensitivity and even the effect of polar magneto‐sensitivity in the layer with the same velocities of surface recombination. The growth of the layer magnetosensitivity under the effect of light and the increase of the layer photosensitivity in the magnetic field are also observed. These results are confirmed experimentally in silicon layers.
Theoretical investigations are made of the effects produced by surface recombination on smallsignal characteristics of double-injection semiconductor samples of a finite cross-section. Expressions are derived in the drift approximation for the concentration of charge carriers, electric field, and impedance in the ohmic relaxation regime, which are determined by the complex effective lifetime. The formulas derived for impedance and its components are analyzed numerically. TeopeTasecKa YrCCJleAOBaHO BJIMFIHMe nOBepXHOCTHO8 peKOM6HHWHH Ha MaJIOCHrHaJIb-HbIe XapaKTepHCTHKH IIO~~IlpOBO~HHKOBbIX 0 6 p a 3~0~ KOHeYHOrO CeqeHHII C ABO#HOe YeHbI Bblpa>rteHHH AnFI HOHueHTpaqH# HOCHTeJre8 3apHDa, 3JleKTpHqeCKOrO IIOJIII H H M I E -ABHCB, KOTOPbIe OIIpeneJIHIOTCfi KOMIUIeKCHbIM 3@@eKTHBHbIM BpeMeHeM mE13HH. HPO-aHmeKsaeB. B Apeii@oBoM n p~6~r m m e~a a nns pemma oMaqecKo8 penmcasaa nony-BeAeH YmneHHMi a~a~l~3 nonyseHHbrx @.op~yn AJIFI aMnefiaHca a ero c o c~a~n s~o~~x .
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