Comments on `Equilibrium space-charge distributions in semiconductors'

Abstract

It is shown that the problem of the spatial distributions of the potential within a finite layer of semiconductor with two kinds of free carriers and any set of donor and acceptor impurities in the case when the degree of ionization is small may be reduced by means of the appropriate renormalization of the spatial coordinate to the identical problem for the intrinsic semiconductor, which has an exact solution. Stress is laid on the importance of Debye length and `generalized' Debye length in the analysis of such problems.