Comment on "Comments on `Equilibrium space-charge distributions in semiconductors'"

Macdonald, J. Ross

doi:10.1088/0022-3727/5/9/103

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…increased equilibrium metal solubility due to local distortion of the lattice and (2) relaxation, i.e. precipitation of supersaturated impurities at extended defects during cooling down [1,2]. Together the two mechanisms lead to a higher concentration of iron in regions with high extended defect concentration, especially for long cooling times which are typical during block cast solidification of mc silicon (>20 hours).…”

Section: Introductionmentioning

confidence: 99%

Simulation of Iron Distribution after Crystallization of mc Silicon

Schön

Habenicht

Schubert

et al. 2009

SSP

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Interstitial iron (Fei) and iron-boron pairs influence or even limit the recombination lifetime in industrial block cast multicrystalline (mc) silicon, though the proportions in the total iron concentration are generally small. Most of the iron in mc silicon is precipitated and less recombination active. This work aims for a better understanding of the distribution of iron in its different states (precipitated or dissolved) over the block height, as well as in regions of different crystal quality. In experimental studies several features of iron in mc silicon were observed, which occur due to the high extended defect density. In our 2-dimensional model for mc silicon, trapping of interstitial Fe at extended defects and precipitation at the extended defects are taken into account. The results are compared with NAA-data and spatial resolved measurements of the Fei concentration.

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Section: Introductionmentioning

confidence: 99%

Simulation of Iron Distribution after Crystallization of mc Silicon

Schön

Habenicht

Schubert

et al. 2009

SSP

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“…The concentration of B in feedstock is low, which is about 2.99×10 17 atoms/cm 3 , and its segregation coefficient is 0.86. There is no removal effect for B by directional solidification [7,8] , so the concentration of B is close to constant. The segregation coefficient of Al is 2.8×10 -3 [8] , so its concentration increases along in the growth direction.…”

Section: Effect Of Impurity On the Resistivity Distributionmentioning

confidence: 99%

Resistivity Distribution Characteristics of Metallurgical Silicon Ingot after Directional Solidification

Shi

Dong

Shi

et al. 2011

MSF

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The distribution of resistivity, impurity and polarity in multicrystalline silicon ingot prepared by directional solidification method was detected. The effect of impurity distribution on resistivity was also researched. The results show that the shapes of equivalence line of resistivity in the cross section and vertical section of the silicon ingot depend on the solid-liquid interface. The resistivity in the vertical section increases with the increasing of solidified height at the beginning of solidification and reaches to maximum at the polarity transition point, then decreases rapidly with the increasing of solidified height and tends to zero on the top of the ingot because of the high impurity concentration. Study proves that the variation of resistivity in the vertical section is mainly relevant to the concentration distribution of the impurities such as Al, B and P in the growth direction.

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Comment on "Comments on `Equilibrium space-charge distributions in semiconductors'"

Cited by 2 publications

References 6 publications

Simulation of Iron Distribution after Crystallization of mc Silicon

Simulation of Iron Distribution after Crystallization of mc Silicon

Resistivity Distribution Characteristics of Metallurgical Silicon Ingot after Directional Solidification

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