A theory of double injection for thin semiconductor layers in a transverse magnetic field is developed. The fundamental equation in drift approximation is analyzed for the semiconductor and insulator regimes by introducing a parameter, i.e. the local effective carrier lifetime. As a result, expressions for the layer current‐voltage characteristics are obtained. For high fields they obey the laws J ∼ U and J ∼ U2, respectively, which accounts for high magnetosensitivity. With low fields applied and at different velocities of surface recombination in the layer the effect of polar magnetosensitivity is observed. The constant Lorentz force approximation is analyzed and compared with a more precise theory.
Theoretical investigations are made of the effects produced by surface recombination on smallsignal characteristics of double-injection semiconductor samples of a finite cross-section. Expressions are derived in the drift approximation for the concentration of charge carriers, electric field, and impedance in the ohmic relaxation regime, which are determined by the complex effective lifetime. The formulas derived for impedance and its components are analyzed numerically. TeopeTasecKa YrCCJleAOBaHO BJIMFIHMe nOBepXHOCTHO8 peKOM6HHWHH Ha MaJIOCHrHaJIb-HbIe XapaKTepHCTHKH IIO~~IlpOBO~HHKOBbIX 0 6 p a 3~0~ KOHeYHOrO CeqeHHII C ABO#HOe YeHbI Bblpa>rteHHH AnFI HOHueHTpaqH# HOCHTeJre8 3apHDa, 3JleKTpHqeCKOrO IIOJIII H H M I E -ABHCB, KOTOPbIe OIIpeneJIHIOTCfi KOMIUIeKCHbIM 3@@eKTHBHbIM BpeMeHeM mE13HH. HPO-aHmeKsaeB. B Apeii@oBoM n p~6~r m m e~a a nns pemma oMaqecKo8 penmcasaa nony-BeAeH YmneHHMi a~a~l~3 nonyseHHbrx @.op~yn AJIFI aMnefiaHca a ero c o c~a~n s~o~~x .
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