Double injection of holes and electrons into an ESFI® SOS film is observed. As is common with magnetodiodes the application of transverse magnetic inductions influences the current–voltage characteristics due to the lifetime profile of the charge carriers across the film. From the dependence of the current on the magnetic induction it is possible to deduce the average bulk lifetime and the surface recombination velocity at the silicon–substrate interface as functions of the voltage. The lifetime is found to increase with voltage, while the surface recombination velocity decreases. These deductions reflect the additional increase in double injection over a certain voltage range and the appearance of magnetoconductance versus voltage extrema. Thus by means of the magnetodiode effect the recombination properties of an ESFI® SOS film may be checked.
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