An empirical I‐V nonlinear model suitable for GaN FET class F PA design

Abstract

In this work, we studied high performances active baluns. Results showed that optimization of a differential amplifier coupling admittance enhances significantly the even mode rejection and allows approaching the theoretical optimal admittance. It was confirmed by measurements. Moreover, a complementary optimization is needed to associate high CMRR and a good noise figure (input balun) or IP3 point (output balun). ACKNOWLEDGMENTS The authors thank S. Kovacic and H. Lafontaine for their technical help. 2. A.H. Baree and I.D. Robertson, Monolithic MESFET distributed baluns based on the distributed amplifier gate-line termination technique, IEEE Trans Microwave Theory

A nonlinear empirical I/V model for GaAs and GaN FETs suitable to design power amplifiers

“…The model from Reference 21, initially created for modeling the I/V characteristics of LDMOS and MOSFET devices, 9,19,26 has been used to model the nonlinear HEMT I/V behavior 5‐8,10 due to its improved prediction of the nonlinear transconductance shape. Based on References 4 and 2, this work presents an empirical drain‐to‐source current model for HEMT GaAs and high power GaN devices.…”

“…Several semi‐empirical analytical I DS ( V GS , V DS ) modeling techniques for GaN and GaAs HEMT devices have been developed, 3‐18 for example, table‐based Artificial Neural Networks (ANNs), or analytical modeling techniques. The table‐based model represents each element to be model with a lookup table developed from measured data.…”

“…Both models were modified to make them more suitable for describing transconductance behavior and its dependence on V DS . In the case of the model from Reference 3, one of its characteristics is the accurate modeling of the peak of the transconductance 4,11,15,16,20 in MESFET and GaN devices. On the other hand, the most notable modification of Reference 19 is the work from Fager 21 to model the I DS characteristic of LDMOS devices.…”

“…In this article, using the I DS ( V GS , V DS ) formulation from Reference 21, we develop an improved nonlinear empirical I/V model capable of modeling the transconductance characteristic and its dependence with V DS of HEMT GaAs and high power GaN devices. To achieve the above, we have included two functions from Reference 4 and introduced a new function that helps to model the transconductance accurately for low and high values of V DS . Using pulsed I/V measurements of a packaged GaN HEMT CGH40045F and a GaAs FET ATF‐34143, the proposed model was validated.…”

Implementation of veriloga GaN HEMT model to design RF switch

“…There are various types of modeling techniques to model a gallium nitride (GaN) high electron mobility transistor (HEMT), but most of them cannot be utilized for circuit design application because they are analytical models, dealing with the physics based behavior of GaN HEMT. The models such as large signal model , semiphysical nonlinear model , empirical model , SPICE , trap model and time domain model are useful models for circuit designing purpose, but the major drawbacks in dealing with these models, is the unavailability of the models for novel device structures, and a large number of variable and fitting parameters are required to model a GaN HEMT behavior. These problems can be resolved by implementing the experimental data to implement the circuit, which will provide an insight view of the device phenomenon.…”