Implementation of veriloga GaN HEMT model to design RF switch

Majumdar, Shubhankar; Bag, Ankush; Biswas, Dhrubes

doi:10.1002/mop.29152

Cited by 4 publications

(2 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several studies have reported on pinch-off issues and early soft/hard breakdown [8]. This technology holds promise for high-power applications, including RF switches [10,[12][13][14][15][16] power amplifiers [11], wireless communication [16,17] and radar systems [12]. Scandiumalloyed Wurtzite III-nitrides (Sc-III-Ns) represent a novel class of ferroelectrics (FEs) characterized by a broad bandgap ranging from 4.9 to 5.6 eV.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT

Pyngrope,

Chaturvedi,

Dasgupta

et al. 2024

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This correspondence introduces a concise depiction of a High Electron Mobility transistor (HEMT) utilizing a model that incorporates theeffect of ferroelectric (FE) polarization on the empirical expression for drain current. This is accomplished by modifying the basic Shockley Equation (S.E) for MESFET. The model employed in this investigation is particularly geared towards investigating the impact of the counterclockwise hysteresis effect due to the use of dielectric ScAlN on the transfer characteristics (Id − Vgs), which is mainly attributed to trapping and de-trapping of charge carriers at the dielectric/semiconductor interface. Modifying the S.E. made it possible to replicate the behavior observed in experimental HEMT accurately. We reported the modified drain current empirical expressions for the ScAlN/AlGaN/GaN HEMT that considers the FE polarization. The results of this study showed good agreement between the Id − Vgs characteristics obtained from the analytical and experimental data, with a root mean square deviation (RMSD) error of 0.97% and a mean squared error (MSE) error of 0.94%. This analytical drain current model, presented herein for the first time, incorporates a limited number of fitting parameters. Therefore, enhancing the computational efficiency to assess the performance of ferroelectric GaN HEMTs for usage in wide-area electronics.

show abstract

Section: Introductionmentioning

confidence: 99%

Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT

Pyngrope,

Chaturvedi,

Dasgupta

et al. 2024

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…These techniques may include large‐signal model [24], semi‐physical nonlinear model, empirical SPICE model, trap model and time‐domain model [25, 26] but the major drawbacks of these models are that a large number of fitting parameters and variables are required to model the behaviour of the device. These disadvantages can be overcome up to some extent by implementing a look‐up table (LUT)‐based Verilog‐A model [27] by using the TCAD simulation results or experimental data.…”

Section: Introductionmentioning

confidence: 99%