Evaluating substrate's effect on RF switch performance via Verilog-A GaN HEMT model

Majumdar, Shubhankar; Biswas, Dhrubes

doi:10.1016/j.mejo.2017.02.007

Cited by 3 publications

(2 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[ 19 , 28 , 32 , 79 , 95 ]. and insulators often used are SiO 2 , SiN x , AlN [ 23 , 28 , 75 , 96 , 97 , 98 , 99 , 100 ]. AlN can also be a heat spreader to reduce the consumption of PCSs [ 101 ].…”

Section: Gete-based Phase-change Switches (Pcss) For Rf Applicationmentioning

confidence: 99%

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Qu,

Gao,

Wang

et al. 2024

Micromachines

View full text Add to dashboard Cite

The global demand for radio frequency (RF) modules and components has grown exponentially in recent decades. RF switches are the essential unit in RF front-end and reconfigurable systems leading to the rapid development of novel and advanced switch technology. Germanium telluride (GeTe), as one of the Chalcogenide phase-change materials, has been applied as an RF switch due to its low insertion loss, high isolation, fast switching speed, and low power consumption in recent years. In this review, an in-depth exploration of GeTe film characterization is presented, followed by a comparison of the device structure of directly heated and indirectly heated RF phase-change switches (RFPCSs). Focusing on the prototypical structure of indirectly heated RFPCSs as the reference, the intrinsic properties of each material layer and the rationale behind the material selection is analyzed. Furthermore, the design size of each material layer of the device and its subsequent RF performance are summarized. Finally, we cast our gaze toward the promising future prospects of RFPCS technology.

show abstract

Section: Gete-based Phase-change Switches (Pcss) For Rf Applicationmentioning

confidence: 99%

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Qu,

Gao,

Wang

et al. 2024

Micromachines

View full text Add to dashboard Cite

show abstract

“…Several studies have reported on pinch-off issues and early soft/hard breakdown [8]. This technology holds promise for high-power applications, including RF switches [10,[12][13][14][15][16] power amplifiers [11], wireless communication [16,17] and radar systems [12]. Scandiumalloyed Wurtzite III-nitrides (Sc-III-Ns) represent a novel class of ferroelectrics (FEs) characterized by a broad bandgap ranging from 4.9 to 5.6 eV.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT

Pyngrope,

Chaturvedi,

Dasgupta

et al. 2024

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This correspondence introduces a concise depiction of a High Electron Mobility transistor (HEMT) utilizing a model that incorporates theeffect of ferroelectric (FE) polarization on the empirical expression for drain current. This is accomplished by modifying the basic Shockley Equation (S.E) for MESFET. The model employed in this investigation is particularly geared towards investigating the impact of the counterclockwise hysteresis effect due to the use of dielectric ScAlN on the transfer characteristics (Id − Vgs), which is mainly attributed to trapping and de-trapping of charge carriers at the dielectric/semiconductor interface. Modifying the S.E. made it possible to replicate the behavior observed in experimental HEMT accurately. We reported the modified drain current empirical expressions for the ScAlN/AlGaN/GaN HEMT that considers the FE polarization. The results of this study showed good agreement between the Id − Vgs characteristics obtained from the analytical and experimental data, with a root mean square deviation (RMSD) error of 0.97% and a mean squared error (MSE) error of 0.94%. This analytical drain current model, presented herein for the first time, incorporates a limited number of fitting parameters. Therefore, enhancing the computational efficiency to assess the performance of ferroelectric GaN HEMTs for usage in wide-area electronics.

show abstract

Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate

Majumdar¹,

Bag

Biswas

2017

Microelectronics Reliability

View full text Add to dashboard Cite

Evaluating substrate's effect on RF switch performance via Verilog-A GaN HEMT model

Cited by 3 publications

References 21 publications

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT

Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate

Contact Info

Product

Resources

About