Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study

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In this paper, an analytical drain current model of double gate MoS2 FET Transistor for low‐frequency noise (LFN) power spectral density is developed, and compared its response with the device simulation of the proposed device structure. The developed low‐frequency noise power spectral density (PSD) model is analyzed with respect to different Trap densities, Oxide thicknesses, and high K‐dielectric materials using the TCAD Device simulation tool. Low‐frequency noise is one of the most important noises in any device since it degrades the device's performance. So, in this paper, we used a unique charge‐control model for analyzing the low‐frequency noise by considering the mobility degradation, trapping, and de‐trapping effects caused by trap densities and device lattice structure. Usually, all the previous studies on drain currents with low frequency are based on fluctuations caused by mobility and carrier variations. In our paper, we even considered the charge density fluctuation to analyze the drain current equation. Using a Charge Control Model, we can compute the parameters like gate capacitance (Cgs, Cgd), channel length modulation, and body effect. While other LFN models like the DC model, small signal model, and hybrid model will focus mainly on the static characteristics of the device such as its DC current–voltage (I‐V) relationship, terminal resistances, and input/output conductance of the devices. All the analytical model results were calibrated with the device simulation and it is observed that both are matches each other. Further, it is observed that with an increase in Trap density, the low‐frequency noise increases and low‐frequency noise is dominant at lower frequencies only (1–10 Hz), and after this frequency range the thermal noise will be the dominant noise factor.

Section: Different Simulation Results With Explanationsmentioning

confidence: 99%

Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps

Kumar,

Panda

2023

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“…However, the short channel effects (SCE) have been seen for the gate length below 250 nm, and in turn, the device noise figure declined. 21,22 To circumvent these adverse effects, multigate structures [23][24][25][26][27] have been emerging as the primary choice due to excellent gate controllability. Low-frequency noise (LFN) measurements of these devices have been undergone to study the effects of impurities and defects and to observe the quality and reliability of these devices.…”

Section: Introductionmentioning

confidence: 99%

“…Low-frequency noise (LFN) measurements of these devices have been undergone to study the effects of impurities and defects and to observe the quality and reliability of these devices. 28,29 Moreover, Panda et al 23 have shown an improved device performance of double gate (DG) AlGaN/GaN MOSHEMT as compared to single gate (SG) MOSHEMT. Sanabrai et al 30 have shown the effect of gate leakage current on the noise figure of AlGaN/GaN HEMT.…”

Section: Introductionmentioning

confidence: 99%

Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

Verma,

Nandi

2023

In this work, a comprehensive investigation on the noise performance of novel optimized back‐barrier engineered GaN based trigate HEMT (BB‐trigate HEMT), have been carried out using Sentaurus TCAD tool. The microwave‐frequency noise of the device has been analyzed using a Green's function approach, assessing the gate and drain noise spectral densities under different bias conditions such as off‐state, subthreshold state and on‐state condition. More importantly, the G‐R noise component in BB‐trigate HEMT is almost eliminated in comparison to conventional trigate HEMT (C‐trigate HEMT). This is due to use of AlGaN back‐barrier layer (BBL). Subsequently, for the first time, it is reported that the noise parameters such as noise resistance and overall noise figure are drastically reduced to ~22 mΩ and ~0.02 dB respectively at 10 GHz frequency for back‐barrier (BB) trigate HEMT having a scaled gate length of 100 nm. The proposed device shows prominent noise performance than conventional trigate HEMT and thereby, it is highly suitable for designing low noise amplifier for X‐band applications.

“…heterojunctions, tandem structures and stability of CZTS devices to enhance the device performance 10 . Furthermore, various materials and techniques are used to improve the electrical and optical properties of CZTS like doping, surface passivation, and anti‐reflection coatings 11 …”

Section: Introductionmentioning

confidence: 99%

Simulation and numerical modeling of high‐efficiency CZTS solar cells with a BSF layer

Dakua,

Panda,

Kashyap

et al. 2023

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The present paper deals with the photovoltaic performance‐based numerical evaluation of copper–zinc–tin–sulfur (CZTS) solar cells embedded with CZTSe as a back surface field (BSF) layer. CZTS has been considered a leading candidate for the fabrication of solar devices owing to its availability and absence of toxicity. Adding a BSF layer to a solar device is a novel way to boost efficiency. It reduces the recombination of the carriers at the back surface, thus increasing the overall current output of the solar cells. SCAPS 1D simulator is used to study the impact of several parameters on electrical properties like temperature, the thickness of the CZTS layer, acceptor doping concentration, and the impact of series and shunt resistances. Considering the optimized parameters in each layer of the solar cells, this work delivers 24.7% efficiency with the BSF layer, which is 8% more than that without the BSF layer. The results of this modeling will facilitate researchers to fabricate a highly efficient CZTS solar cell.