Ambipolar Memory Devices Based on Reduced Graphene Oxide and Nanoparticles

Abstract

There has been huge interest in advanced nanoelectronic devices based on graphene layers due to their remarkable electrical properties, which include extremely high carrier mobility and the linear energy dispersion relationship. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] However, a lack of methods for mass-production remains a major obstacle for the implementation of these devices in practical applications. The mass fabrication of graphene-based electrical devices requires precise control over the location of the graphene channels on a solid substrate. In addition, for high-performance integrated devices, one should be able to combine graphene devices with high-k dielectrics and control the carrier density in the graphene layers. The conventional doping method that involves the implantation of impurity atoms, however, is not suitable for the integrated devices based on pristine graphene since it will cause permanent damage.[17] Herein, we report a new method for large-scale assembly of graphene oxide (GO) for the fabrication of ambipolar memory devices. In this approach, GO is selectively assembled onto positively charged molecular layers and reduced to obtain the desired device properties. Using this technique, we demonstrate the fabrication and effective operation of floatinggate memory devices. To this end, we sequentially perform the deposition of a dielectric film over the top of a reduced GO junction, the assembly of nanoparticles (NPs), and the fabrication of a top gate. As a proof of concept, we successfully demonstrate that this device can be operated as both conventional conductivityswitching memory and new type-switching memory by adjusting the charge density on the NPs. Importantly, since our method uses only microfabrication processes, it can be utilized immediately by the semiconductor industry and should be a major breakthrough in building innovative electronics.Our memory devices comprise reduced GO pieces and gold NPs that are fabricated by combining the assembly process of nanostructures with conventional microfabrication (Fig.

Applications of gold nanoparticles in medicine and therapy

“…This method, however, often lacks fine control over the size, uniformity and density of AuNPs on the GO sheets in the reaction process. 108 AuNPs can be decorated to GO surface based on NH-Au binding 109 or SH-Au binding. 110 DNA 111 and proteins 112 have been also used as the molecular linkers between AuNPs and GO.…”

Facile and Novel in-Plane Structured Graphene/TiO2 Nanocomposites for Memory Applications

“…The memory behavior here might be attributed to the charge trapping and detrapping process. The interfacial defects in GO can act as trapping sites [42,43] that capture electrons injected from the electrodes. Ag electrode is used because Ag is an electrochemically active material.…”

Single‐Crystal C60 Needle/CuPc Nanoparticle Double Floating‐Gate for Low‐Voltage Organic Transistors Based Non‐Volatile Memory Devices

“…[ 23,37,38 ] However, optimizing the memory materials and structures to enable continuous scaling has remained a signifi cant challenge until now. In particular, the detailed mechanism and design principles for organic nonvolatile memory with a double fl oating-gate are not clear.…”

“…[ 23,37,38 ] However, optimizing the memory materials and structures to enable continuous scaling has remained a signifi cant challenge until now. In particular, the detailed mechanism and design principles for organic nonvolatile memory with a double fl oating-gate are not clear.In the work reported here, we fi rst compatibly combined the three concepts of "double fl oating-gate", [ 24,[34][35][36]39,40 ] "ambipolar charge carrier trapping", [ 23,37,38 ] and "discrete trapping sites" [ 12,13 ] to produce high-performance non-volatile chargetrapping memory based on organic FET (OFET) device structures. Such heterostructure double fl oating-gate memory devices achieved a large charge storage capacity and a high density of available independent trapping sites that enable stable operation by displaying long retention.…”