Strontium titanate (SrTiO3) is the first and best known superconducting semiconductor. It exhibits an extremely low carrier density threshold for superconductivity, and possesses a phase diagram similar to that of high-temperature superconductors--two factors that suggest an unconventional pairing mechanism. Despite sustained interest for 50 years, direct experimental insight into the nature of electron pairing in SrTiO3 has remained elusive. Here we perform transport experiments with nanowire-based single-electron transistors at the interface between SrTiO3 and a thin layer of lanthanum aluminate, LaAlO3. Electrostatic gating reveals a series of two-electron conductance resonances-paired electron states--that bifurcate above a critical pairing field Bp of about 1-4 tesla, an order of magnitude larger than the superconducting critical magnetic field. For magnetic fields below Bp, these resonances are insensitive to the applied magnetic field; for fields in excess of Bp, the resonances exhibit a linear Zeeman-like energy splitting. Electron pairing is stable at temperatures as high as 900 millikelvin, well above the superconducting transition temperature (about 300 millikelvin). These experiments demonstrate the existence of a robust electronic phase in which electrons pair without forming a superconducting state. Key experimental signatures are captured by a model involving an attractive Hubbard interaction that describes real-space electron pairing as a precursor to superconductivity.

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 Wireless Sensor Network (WSN) is an emerging technology that shows great promise for various futuristic applications both for mass public and military. The sensing technology combined with processing power and wireless communication makes it lucrative for being exploited in abundance in future. The inclusion of wireless communication technology also incurs various types of security threats. The intent of this paper is to investigate the security related issues and challenges in wireless sensor networks. We identify the security threats, review proposed security mechanisms for wireless sensor networks. We also discuss the holistic view of security for ensuring layered and robust security in wireless sensor networks.

We investigated the effects of passivation on the electrical characteristics of molybdenum disulfide (MoS(2)) field effect transistors (FETs) under nitrogen, vacuum, and oxygen environments. When the MoS(2) FETs were exposed to oxygen, the on-current decreased and the threshold voltage shifted in the positive gate bias direction as a result of electrons being trapped by the adsorbed oxygen at the MoS(2) surface. In contrast, the electrical properties of the MoS(2) FETs changed only slightly in the different environments when a passivation layer was created using polymethyl methacrylate (PMMA). Specifically, the carrier concentration of unpassivated devices was reduced to 6.5 × 10(15) cm(-2) in oxygen from 16.3 × 10(15) cm(-2) in nitrogen environment. However, in PMMA-passivated devices, the carrier concentration remained nearly unchanged in the range of 1-3 × 10(15) cm(-2) regardless of the environment. Our study suggests that surface passivation is important for MoS(2)-based electronic devices.

There has been huge interest in advanced nanoelectronic devices based on graphene layers due to their remarkable electrical properties, which include extremely high carrier mobility and the linear energy dispersion relationship. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] However, a lack of methods for mass-production remains a major obstacle for the implementation of these devices in practical applications. The mass fabrication of graphene-based electrical devices requires precise control over the location of the graphene channels on a solid substrate. In addition, for high-performance integrated devices, one should be able to combine graphene devices with high-k dielectrics and control the carrier density in the graphene layers. The conventional doping method that involves the implantation of impurity atoms, however, is not suitable for the integrated devices based on pristine graphene since it will cause permanent damage.[17] Herein, we report a new method for large-scale assembly of graphene oxide (GO) for the fabrication of ambipolar memory devices. In this approach, GO is selectively assembled onto positively charged molecular layers and reduced to obtain the desired device properties. Using this technique, we demonstrate the fabrication and effective operation of floatinggate memory devices. To this end, we sequentially perform the deposition of a dielectric film over the top of a reduced GO junction, the assembly of nanoparticles (NPs), and the fabrication of a top gate. As a proof of concept, we successfully demonstrate that this device can be operated as both conventional conductivityswitching memory and new type-switching memory by adjusting the charge density on the NPs. Importantly, since our method uses only microfabrication processes, it can be utilized immediately by the semiconductor industry and should be a major breakthrough in building innovative electronics.Our memory devices comprise reduced GO pieces and gold NPs that are fabricated by combining the assembly process of nanostructures with conventional microfabrication (Fig.

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In the ferroelectric devices, polarization control is usually accomplished by application of an electric field. In this paper, we demonstrate optically induced polarization switching in BaTiO3-based ferroelectric heterostructures utilizing a two-dimensional narrow-gap semiconductor MoS2 as a top electrode. This effect is attributed to the redistribution of the photo-generated carriers and screening charges at the MoS2/BaTiO3 interface. Specifically, a two-step process, which involves formation of intra-layer excitons during light absorption followed by their decay into inter-layer excitons, results in the positive charge accumulation at the interface forcing the polarization reversal from the upward to the downward direction. Theoretical modeling of the MoS2 optical absorption spectra with and without the applied electric field provides quantitative support for the proposed mechanism. It is suggested that the discovered effect is of general nature and should be observable in any heterostructure comprising a ferroelectric and a narrow gap semiconductor.

Reports of emergent conductivity, superconductivity and magnetism have helped to fuel intense interest in the rich physics and technological potential of complex-oxide interfaces. Here we employ magnetic force microscopy to search for room-temperature magnetism in the well-studied LaAlO 3 /SrTiO 3 system. Using electrical top gating to control the electron density at the oxide interface, we directly observe the emergence of an in-plane ferromagnetic phase as electrons are depleted from the interface. Itinerant electrons that are reintroduced into the interface align antiferromagnetically with the magnetization at first screening and then destabilizing it as the conductive regime is approached. Repeated cycling of the gate voltage results in new, uncorrelated magnetic patterns. This newfound control over emergent magnetism at the interface between two non-magnetic oxides portends a number of important technological applications.