All-analytic surface potential model for SOI MOSFETs

Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs

“…(20) provides sufficient accuracy for the purpose of compact modeling of DD-SOI MOSFETs. This is consistent with the fact that a simplified form of (20) without the back gate effect has long served as a foundation of DD-SOI modeling [3,10,11]. Fig.…”

“…An additional approximation E b s % 0, which is often invoked in the compact models of fully depleted [21] and dynamically depleted SOI MOSFETs [3,10,11], is not used here.…”

“…We also present a new approximate coupling equation which explicitly includes the back gate effect. This effect is often ignored in previous surface-potential-based DD-SOI models [3,[10][11][12] but is essential for the accuracy of circuit design applications. In addition to the drain current, complete compact model of DD-SOI MOSFETs must include simple and accurate surface-potential-based expressions for the terminal charges which are not available in the literature.…”

“…The surface-potential-based approach, which has emerged as the mainstream of the compact modeling for both bulk [6,7] and PD-SOI [8,9] devices, has been already introduced for the DD-SOI in [3,[10][11][12]. It starts from the first integral of Poisson's equation in the channel region.…”

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

“…When the backgate oxide thickness approaches that of the front gate, SOI conceptually becomes DG. Recently, there has been intense research interest in the development of compact models for SOI/DG MOSFETs [11][12][13][14][15]. Most of the models are integrable ones [7,11,13]; some are iterative [11,15] and others are explicit [13,14].…”