Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs

Wu, Weimin; Yao, Wei; Gildenblat, G.

doi:10.1016/j.sse.2009.12.040

Cited by 26 publications

(10 citation statements)

References 35 publications

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“…This can create a leakage path along the back surface of the Si body and can also affect the characteristics of the front surface through charge coupling under fully-depleted (FD) conditions [3], [4], [66]. SOI devices with thin Si bodies can transition between partially-depleted (PD) and fully-depleted (FD) conditions as a function of the terminal voltages and are said to operate in a dynamic depletion (DD) mode [67], [68]. The DD operation is well known and has been modeled analytically in [67]- [69].…”

Section: B Silicon-on-insulator (Soi) Devicesmentioning

confidence: 99%

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

Esqueda

Barnaby

King

2015

IEEE Trans. Nucl. Sci.

106

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This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxidesemiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential ( ) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.

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Section: B Silicon-on-insulator (Soi) Devicesmentioning

confidence: 99%

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

Esqueda

Barnaby

King

2015

IEEE Trans. Nucl. Sci.

106

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“…between two boundaries (X PD,c and X FD,c ) with the corresponding body thicknesses (T Si,PD and T Si,FD ) is assumed [used in (4)], given by…”

Section: A Impact-ionization Currentmentioning

confidence: 99%

“…Moreover, the well-known FB effect (FBE) such as the kink effect [1], important in PD-SOI devices, is mostly modeled without body-thickness scaling. In contemporary UTB-SOI and DG-FinFETs, device operations may undergo PD to FD [2] as well as DD [3], [4] transitions. FBEs in dc and ac, together with body-doping/thickness as well as bias/temperature scaling, become important to be included in a CM that is physical, smooth, and symmetric.…”

Section: Introductionmentioning

confidence: 99%

Floating-Body Effect in Partially/Dynamically/Fully Depleted DG/SOI MOSFETs Based on Unified Regional Modeling of Surface and Body Potentials

Chiah

Zhou

2014

IEEE Trans. Electron Devices

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A compact terminal current/charge model for partially/dynamically/fully depleted (PD)/(DD)/(FD) double-gate (DG) and silicon-on-insulator (SOI) MOSFETs with floating-body (FB) effect based on unified regional modeling of the surface and body potentials is presented. The model accurately describes the physical behavior of the impact-ionization current that gives rise to the hump in the C-V characteristics and the body thicknessand doping-dependent kink effect. The FB potential at the zerofield location in the body is the key to model the electrical characteristics of PD/DD/FD devices with complete body doping and thickness scalability. The model is validated by comparison with I-V and C-V data of the numerical devices in a given range of body doping, body thickness, and temperature. Such a scalable model is important for physical and variability modeling of DG/SOI FinFETs with doped body. Index Terms-Compact model (CM), double gate (DG), dynamically depleted (DD), floating body (FB), fully depleted (FD), impact ionization, MOSFET, partially depleted (PD), silicon-on-insulator (SOI), surface potential, unified regional modeling (URM).

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“…The charge and hence the current could then be accurately predicted in the weak, moderate and strong inversion region. Wu et al (2010) presented a model which could predict the transport characteristics independent of whether the device works as partially depleted SOI (PD-SOI) or fully depleted SOI (FD-SOI). Their model could accommodate transition from one to another.…”

Section: The Development Of Soi Mosfet Modelingmentioning

confidence: 99%

Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Ghosh

2014

Silicon-on-Insulator (SOI) Technology

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Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs

Cited by 26 publications

References 35 publications

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

Floating-Body Effect in Partially/Dynamically/Fully Depleted DG/SOI MOSFETs Based on Unified Regional Modeling of Surface and Body Potentials

Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

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