A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

Abstract

Abstract-A continuous, explicit drain-current equation for short-channel double-gate (DG) MOSFETs has been derived based on the explicit surface potential equation. The model is physically derived from Poisson's equation in each region of operation and adopted in the unified regional approach. The proposed model has been verified with numerical solutions, physically scalable with channel length and gate/oxide materials as well as oxide/channel thicknesses.