AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

Chang, Shoou‐Jinn; Chang, Chin Sung; Su, Yan–Kuin; Chang, P.T.; Wu, Yu Rue; Huang, Ke; Chen, T.P.

doi:10.1109/68.618476

Cited by 19 publications

(4 citation statements)

References 9 publications

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“…The experimental results showed that the luminescence efficiency of Ga x In 1−x P-based LED degrades significantly for emission wavelengths shorter than 590 nm (2.1 eV) [6]. Despite carrier confinement issues for large bandgap Ga x In 1−x P alloys [7,8], a simplistic approach was developed to model the luminescence intensity degradation as a function of the energetic separation between direct and indirect bands [9]. Based on this model, as the Ga content x increases for direct band Ga x In 1−x P to approach a larger bandgap energy, the energetic separation between the Γ and the X minima, E gΓ x − E gX x, becomes smaller.…”

Section: Introductionmentioning

confidence: 99%

Direct bandgap photoluminescence from n-type indirect GaInP alloys

et al. 2017

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This work studies Te doping effects on the direct bandgap photoluminescence (PL) of indirect Ga x In 1−x P alloys (0.72 ≤ x ≤ 0.74). The temperature-dependent PL shows that the energy difference between direct Γ valley and indirect X valleys is reduced due to the bandgap narrowing (BGN) effect, and the direct band transition gradually dominates the PL spectra as temperature increases. Carrier thermalization has been observed for Te-doped Ga x In 1−x P samples, as integrated PL intensity increases with increasing temperature from 175 to 300 K. The activation energy for carrier thermalization is reduced as doping concentration increases. Both BGN effect and carrier thermalization contribute to the carrier injection into the Γ valley. As a result, the direct band transition is enhanced in the Te-doped indirect Ga x In 1−x P alloys. Therefore, the PL intensity of the Ga 0.74 In 0.26 P sample with active doping concentration of 9 × 10 17 cm −3 is increased by five times compared with that of a nominally undoped sample. It is also found that the PL intensity is degraded significantly when the doping concentration is increased to 5 × 10 18 cm −3. From cross-section transmission electron microscopy, no large dopant clusters or other extended defects were found contributing to this degradation.

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Section: Introductionmentioning

confidence: 99%

Direct bandgap photoluminescence from n-type indirect GaInP alloys

et al. 2017

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“…RCLEDs have not the complicated epitaxy and fabrication processes which are necessary for vertical-cavity surface-emitting lasers (VCSELs). 3) The AlGaInP material system is commonly used for high-brightness red, orange, yellow, and green emitters due to its lattice match with GaAs substrates 4,5) which have also been demonstrated in the visible wavelength range of RCLED. 6,7) In particular, the red-emitting RCLED plays an important role in the development of plastic optical fiber (POF) data communications, since they could be an excellent match for poly(methyl methacrylate) (PMMA)-based POF with a minimum attenuation at 650 nm and a wide core diameter (0.75 -1 mm).…”

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confidence: 99%

Temperature Characteristics of High Modulation Rate Platinum-Diffused AlGaInP Resonant-Cavity Light-Emitting Diodes

Hsieh

Yeh

Chang

et al. 2006

jjap

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This study is focused on the temperature characteristics of platinum-diffused AlGaInP resonant-cavity light-emitting diodes (RCLED). The shape of the platinum-diffused AlGaInP RCLED emission spectra and the full width at half maximum (FWHM) of the main electroluminescent (EL) spectra are almost uninfluenced over the measured temperature range of 20 to 100 °C. Therefore, the platinum-diffused devices show a high characteristic temperature, and a small temperature shift in the peak emission wavelength.

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“…1 [32,33], and the conduction band confinement is expected to be less than 50 meV. The low conduction band confinement results in the overflow of a large portion of injected electrons into the cladding layers causing high electrical leakage and low quantum efficiency [28,29]. [36].…”

Section: Current Yellow-green Leds Limitationsmentioning

confidence: 99%

“…It was found that the carrier confinement was more difficult for GaxIn1-xP alloys as the Ga content increased[83]. Despite carrier confinement issues for large bandgap GaxIn1-xP alloys[29,30], a simplistic approach was developed to model the luminescence intensity degradation as a function of the energetic separation between direct and indirect bands[84]:…”

mentioning

confidence: 99%

Epitaxy and characterization of AlGaInP-based LEDs on Si substrates for visible-spectrum light emission

Wang¹

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AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

Cited by 19 publications

References 9 publications

Direct bandgap photoluminescence from n-type indirect GaInP alloys

Direct bandgap photoluminescence from n-type indirect GaInP alloys

Temperature Characteristics of High Modulation Rate Platinum-Diffused AlGaInP Resonant-Cavity Light-Emitting Diodes

Epitaxy and characterization of AlGaInP-based LEDs on Si substrates for visible-spectrum light emission

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