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We describe the results produced from our research on integrating GaN devices with Si CMOS integrated circuits. High quality, low bow and robust 200 mm GaN on SEMI-spec epitaxial Si (725 μm) wafers are achieved by using a unique shaped susceptor and careful control of buffer design. High brightness InGaN/GaN MQW LEDs emitting at 450 nm with total III-N stack thickness of 3.6 μm have also been demonstrated. The growth technology of GaN on SEMI-spec 200 mm leads to new wafer/device platforms such as GaN-OI and CMOS+GaN that will open new avenues in device performance and integration of III-N devices with Si CMOS.

Low-temperature solders have wide applications in integrated circuits and micro-electromechanical systems packaging. In this article, a study on Ag-In solder for chip-to-chip thermocompression bonding was carried out. The resulting joint consists of AgIn 2 and Ag 9 In 4 phases, with the latter phase having a melting temperature higher than 400°C. Complete consumption of In solder into a Ag-rich intermetallic compound is achieved by applying a bond pressure of 1.4 MPa at 180°C for 40 min. We also observe that the bonding pressure effect enables a Ag-rich phase to be formed within a shorter bonding duration (10 min) at a higher pressure of 1.6 MPa. Finally, prolonged aging leads to the formation of the final phase of Ag 9 In 4 in the bonded joints.

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Dislocations are known to be associated with both physical and electrical degradation mechanisms of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). We have observed threading dislocation movement toward the gate-edges in AlGaN/GaN-on-Si HEMT under high reverse bias stressing. Stressed devices have higher threading dislocation densities (i.e. ∼5 × 109/cm2) at the gate-edges, as compared to unstressed devices (i.e. ∼2.5 × 109/cm2). Dislocation movement correlates well with high tensile stress (∼1.6 GPa) at the gate-edges, as seen from inverse piezoelectric calculations and x-ray synchrotron diffraction residual stress measurements. Based on Peierls stress calculation, we believe that threading dislocations move via glide in 〈112¯0〉/{11¯00} and 〈112¯0〉/{11¯01} slip systems. This result illustrates the importance of threading dislocation mobility in controlling the reliability of AlGaN/GaN-on-Si HEMTs.

The speed at which phase change memory devices can operate depends strongly on the crystallization kinetics of the amorphous phase. To better understand factors that affect the crystallization rate, we have investigated crystallization of GeTe films as a function of their deposition temperatures and deposition rates, using X-ray synchrotron radiation and Raman spectroscopy. As-deposited films were found to be fully amorphous under all conditions, even though films deposited at higher temperatures and lower rates experienced lower effective quench rates. Non-isothermal transformation curves show that the apparent crystallization temperature of GeTe films decreases with increasing deposition temperature and decreasing deposition rate. It was found that this correlates with a decrease in the activation energy for nucleation (calculated using Kissinger's analysis), while the activation energy for crystal growth remained unaffected. From Raman spectroscopy measurements, it was found that increasing the deposition temperature or decreasing the deposition rate, and therefore the effective quench rate, reduces the number of homopolar Te-Te bonds and thereby reduces the barrier to crystal nucleation.

Metal alloys are usually fabricated by melting constituent metals together or sintering metal alloy particles made by high energy ball milling (mechanical alloying). All these methods only allow for bulk alloys to be formed. This manuscript details a new method of fabricating Rhodium–Iridium (Rh–Ir) metal alloy films using atomic layer deposition (ALD) and rapid Joule heating induced alloying that gives functional thin film alloys, enabling conformal thin films with high aspect ratios on 3D nanostructured substrate. In this work, ALD was used to deposit Rh thin film on an Al2O3 substrate, followed by an Ir overlayer on top of the Rh film. The multilayered structure was then alloyed/sintered using rapid Joule heating. We can precisely control the thickness of the resultant alloy films down to the atomic scale. The Rh–Ir alloy thin films were characterized using scanning and transmission electron microscopy (SEM/TEM) and energy dispersive spectroscopy (EDS) to study their microstructural characteristics which showed the morphology difference before and after rapid Joule heating and confirmed the interdiffusion between Rh and Ir during rapid Joule heating. The diffraction peak shift was observed by Grazing-incidence X-ray diffraction (GIXRD) indicating the formation of Rh–Ir thin film alloys after rapid Joule heating. X-ray photoelectron spectroscopy (XPS) was also carried out and implied the formation of Rh–Ir alloy. Molecular dynamics simulation experiments of Rh–Ir alloys using Large-Scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) were performed to elucidate the alloying mechanism during the rapid heating process, corroborating the experimental results.