This investigation explores how oxidation affects the gadolinium oxide capacitor and the corresponding Gd2O3 hysteresis phenomenon. The current-voltage varied with Gd2O3 thickness and a charged capacitance voltage (C-V) curve with a left shift is also observed in experimental results. The breakdown voltages rise with increasing oxidation time, while the corresponding C-V hysteresis gaps decrease with increasing oxidation time.
Pulsating white dwarf stars can be used as astrophysical laboratories to constrain the properties of weakly interacting particles. Comparing the cooling rates of these stars with the expected values from theoretical models allows us to search for additional sources of cooling due to the emission of axions, neutralinos, or neutrinos with magnetic dipole moment. In this work, we derive an upper bound to the neutrino magnetic dipole moment (µ ν ) using an estimate of the rate of period change of the pulsating DB white dwarf star PG 1351+489. We employ state-of-the-art evolutionary and pulsational codes which allow us to perform a detailed asteroseismological period fit based on fully DB white dwarf evolutionary sequences. Plasmon neutrino emission is the dominant cooling mechanism for this class of hot pulsating white dwarfs, and so it is the main contributor to the rate of change of period with time (Π) for the DBV class. Thus, the inclusion of an anomalous neutrino emission through a nonvanishing magnetic dipole moment in these sequences notably influences the evolutionary timescales, and also the expected pulsational properties of the DBV stars. By comparing the theoreticalΠ value with the rate of change of period with time of PG 1351+489, we assess the possible existence of additional cooling by neutrinos with magnetic dipole moment. Our models suggest the existence of some additional cooling in this pulsating DB white dwarf, consistent with a non-zero magnetic dipole moment with an upper limit of µ ν 10 −11 µ B . This bound is somewhat less restrictive than, but still compatible with, other limits inferred from the white dwarf luminosity function or from the color-magnitude diagram of the Globular cluster M5. Further improvements of the measurement of the rate of period change of the dominant pulsation mode of PG 1351+489 will be necessary to confirm our bound.
The ZrO 2 / SiO 2 stacked oxides prepared by thermal oxidation were implemented at the temperature of 600 to 900 in ambient oxygen. The transmission electron microscopy (TEM) results indicated that the higher the oxidation temperature the thicker the oxide layer. The total capacitance of corresponding metal oxide semiconductor capacitor is decreased and the equivalent oxide thickness (EOT) is increased. Large shift of flat-band voltages are observed when the ZrO 2 / SiO 2 stacked oxides ElectrolyteInsulator-Semiconductors (EIS) structure is immersed in the pH=2,4,6,8 and 10 buffer solutions, respectively. The hydrogen ion sensitivity of this structure is found up to be 50.6 mV/pH when the oxidation temperature is 900 .
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