Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors

Hsieh, Li-Zen; Ko, Hong-Hsi; Kuei, Ping-Yu; Chang, Liann‐Be; Jeng, Ming–Jer

doi:10.1063/1.2084333

Cited by 9 publications

(10 citation statements)

References 6 publications

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“…[9,21] Using NiSi metal gates on Gd 2 O 3 grown on Si, it has been possible to achieve equivalent oxide thicknesses as low as 0.86 nm. [10] Gd 2 O 3 films can be grown by several techniques such as the sol-gel method, [2] electron beam evaporation (EBE), [4,6,9,13,14,17] sputtering, [12] ion-beam epitaxy, [5] molecular beam epitaxy (MBE), [10,19,21] oxidation of Gd metal films, [16,20,22] metal-organic (MO)CVD, [15,23] and ALD. [24][25][26] The growth techniques available may be distinguished on the basis of optimum deposition temperatures and suitability for large area substrate processing.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Gadolinium Oxide Films

Kukli

Hatanpää

Ritala

et al. 2007

Chemical Vapor Deposition

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Thin cubic Gd 2 O 3 films are grown by atomic layer deposition (ALD), in the temperature range 300-400°C, using a novel tris(2,3-dimethyl-2-butoxy)gadolinium(III) precursor, Gd[OC(CH 3 ) 2 CH(CH 3 ) 2 ] 3 , and water. The films are crystalline in their as-deposited state. The films contain some residual hydrogen and carbon, and are probably oxygen-deficient in the as-deposited state, causing flat-band shifts in Gd 2 O 3 -based metal-oxide-semiconductor (MOS) capacitor structures. On the other hand, the permittivity of Gd 2 O 3 dielectric layers reaches 16, approximately, when calculated from the relationship between equivalent and physical oxide thicknesses, and breakdown fields as high as 8 MV cm -1 .

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Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Gadolinium Oxide Films

Kukli

Hatanpää

Ritala

et al. 2007

Chemical Vapor Deposition

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“…Thus, previously grown SiO 2 in the stacked structure has diffusion resistance. 3,9) However, the thermal oxidation of metal films/SiO 2 /Si stacked structures has been examined in detail in only a few studies. For further investigation of the interaction between atoms, and understanding both the binding characteristics and depth distributions of such structures, we grew thick dielectric films.…”

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confidence: 99%

Growth Evolution of ZrO₂ from Deposited Zr Metal during Thermal Oxidation

Hsieh

Kuei

et al. 2006

Jpn. J. Appl. Phys.

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Pulsating white dwarf stars can be used as astrophysical laboratories to constrain the properties of weakly interacting particles. Comparing the cooling rates of these stars with the expected values from theoretical models allows us to search for additional sources of cooling due to the emission of axions, neutralinos, or neutrinos with magnetic dipole moment. In this work, we derive an upper bound to the neutrino magnetic dipole moment (µ ν ) using an estimate of the rate of period change of the pulsating DB white dwarf star PG 1351+489. We employ state-of-the-art evolutionary and pulsational codes which allow us to perform a detailed asteroseismological period fit based on fully DB white dwarf evolutionary sequences. Plasmon neutrino emission is the dominant cooling mechanism for this class of hot pulsating white dwarfs, and so it is the main contributor to the rate of change of period with time (Π) for the DBV class. Thus, the inclusion of an anomalous neutrino emission through a nonvanishing magnetic dipole moment in these sequences notably influences the evolutionary timescales, and also the expected pulsational properties of the DBV stars. By comparing the theoreticalΠ value with the rate of change of period with time of PG 1351+489, we assess the possible existence of additional cooling by neutrinos with magnetic dipole moment. Our models suggest the existence of some additional cooling in this pulsating DB white dwarf, consistent with a non-zero magnetic dipole moment with an upper limit of µ ν 10 −11 µ B . This bound is somewhat less restrictive than, but still compatible with, other limits inferred from the white dwarf luminosity function or from the color-magnitude diagram of the Globular cluster M5. Further improvements of the measurement of the rate of period change of the dominant pulsation mode of PG 1351+489 will be necessary to confirm our bound.

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“…In the previous studies [7,17], the SiO 2 film with smooth and tight surface grown slowly by anodic oxidation had good blocking function to prevent the growth of Gd-silicate between the Gd 2 O 3 layer and the Si substrate. Therefore, we expected this SiO 2 barrier film also had good blocking function to prevent the growth of Zr-silicate.…”

Section: Resultsmentioning

confidence: 98%