Temperature Characteristics of High Modulation Rate Platinum-Diffused AlGaInP Resonant-Cavity Light-Emitting Diodes

Abstract

This study is focused on the temperature characteristics of platinum-diffused AlGaInP resonant-cavity light-emitting diodes (RCLED). The shape of the platinum-diffused AlGaInP RCLED emission spectra and the full width at half maximum (FWHM) of the main electroluminescent (EL) spectra are almost uninfluenced over the measured temperature range of 20 to 100 °C. Therefore, the platinum-diffused devices show a high characteristic temperature, and a small temperature shift in the peak emission wavelength.

Comparative analysis of platinum diffusion parameters in GaAs and GaN semiconductors

“…In addition, Pt-diffused devices show a high characteristic temperature and a small temperature shift in their peak emission wavelength. 8 Although doping by diffusion is a conventional silicon integrated circuit processing technique, there are few diffusion reports on GaN or GaAs semiconductors. Furthermore, the relationships between Pt and GaAs or GaN were generally focused on metal-semiconductor contact.…”

High-Performance InGaN-Based Green Resonant-Cavity Light-Emitting Diodes for Plastic Optical Fiber Applications

“…All the phenomena above are discussed as follows: With the current increasing, the decrease of the EL intensity of RCLEDs/sapphire was caused by nonradiative recombination and ohmic contact heating by the dynamic resistance. The temperature dependence of the light output intensity can be described by the equation below [18], [19] ( 1) where is a reference intensity and is the characteristic temperature. Likewise, the intrinsic emission wavelength ( ) and the cavity resonance wavelength ( ) shift toward longer wavelengths by the different rates also resulted from the decrease in emission intensity [20].…”