AlGaInP/GaInP double-heterostructure orange light-emitting diodes on GaAsP substrates prepared by metalorganic vapor-phase epitaxy

Lin, J. Y.; Wu, Meng‐Chyi; Jou, M. J.; Chang, Chia‐Ming; Lee, Biing‐Jye

doi:10.1016/0022-0248(94)90977-6

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Cited by 7 publications

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The reliability of (AlxGa1?x)0.5In0.5P visible light-emitting diodes

Lacey

Morgan

Aliyu

et al. 2000

Qual. Reliab. Engng. Int.

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The reliability of AlGaInP double‐heterostructure (DH) light‐emitting diodes (LEDs) operating typically at 600 nm has been studied. To investigate degradation, accelerated aging at ambient temperatures of 50, 75 and 125°C has been carried out for over 5000 h. The activation energy of homogeneous degradation was determined to be 0.8 eV and an extrapolated half‐life in excess of 106 h was estimated at an ambient temperature of 20°C. Copyright © 2000 John Wiley & Sons, Ltd.

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The reliability of (AlxGa1?x)0.5In0.5P visible light-emitting diodes

Lacey

Morgan

Aliyu

et al. 2000

Qual. Reliab. Engng. Int.

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Light‐Emitting Diodes

Mohammad

Morko��

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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The sections in this article are A Device Physics Primer Model Device Structures Semiconductor Materials Used Performance Characteristics of Visible Light Emitting Diodes Infrared Light Emitting Diodes Conclusions Acknowledgments

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