ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena

doi:10.1088/0268-1242/30/12/125017

Cited by 11 publications

(5 citation statements)

References 33 publications

(44 reference statements)

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“…Various oxide materials have been reported as gate dielectric for GaN MOS‐HEMTs. For example, Si 3 N 4 deposited by in situ metalorganic chemical vapor deposition (MOCVD) , Al 2 O 3 deposited by MOCVD or atomic layer deposition (ALD), HfO 2 deposited by ALD and SiO 2 deposited by ALD or plasma enhanced chemical vapor deposition . Among these, Al 2 O 3 and SiO 2 have been two of the most suitable oxides owing to their relatively large conduction band offset (CBO) with GaN and large breakdown electric field.…”

Section: Introductionmentioning

confidence: 96%

Al₂O₃ Insertion Layer for Improved PEALD SiO₂/(Al)GaN Interfaces

Gao

Mei

et al. 2018

Physica Status Solidi (a)

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The development of high-quality gate dielectric/III-N semiconductor interfaces is indispensable to achieve high performance GaN-based high electron mobility transistors (HEMTs). In this work, we present improved interfaces between SiO 2 and GaN (or AlGaN) with Al 2 O 3 insertion layer deposited by plasma-enhanced atomic layer deposition (PEALD). Interface state density (D it ) and border trap density (N bt ) were characterized using UV-assisted C-V measurement on metal-oxide-semiconductor capacitors (MOSCAPs). SiO 2 with Al 2 O 3 insertion layer exhibited integrated D it of 1.93 Â 10 11 cm À2 , one order of magnitude lower than that without Al 2 O 3 insertion layer. N bt of SiO 2 with Al 2 O 3 insertion layer is nearly twice of that without Al 2 O 3 insertion layer. Stressed C-V measurement further confirmed improved interface with Al 2 O 3 insertion layer. To investigate the performance of MOS-HEMT using SiO 2 with Al 2 O 3 insertion layer as a gate dielectric, pulsed I DS -V GS measurements were performed. MOS-HEMT exhibited positive threshold voltage shift, which is attributed to electron trapping in interface states and border traps. Experimental Section MOSCAPThe GaN epilayer was grown on 2-inch diameter sapphire substrate by MOCVD. The layer structure, shown in Figure 1(a)

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Section: Introductionmentioning

confidence: 96%

Al₂O₃ Insertion Layer for Improved PEALD SiO₂/(Al)GaN Interfaces

Gao

Mei

et al. 2018

Physica Status Solidi (a)

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“…This phenomenon was mainly attributed to the influence of the roughness of the substrates. When the AAO was formed, the rough substrate induced more defects in the AAO compared with the dielectric layer fabricated on a smooth substrate [38][39][40], which affected the gate dielectric capacitance and thus caused performance degradation of the TFTs [41,42]. In addition, the electrode stacked on the dielectric layer could have larger roughness, thus the electric field distribution and surface charge density were affected, leading to the degradation of the effective unit-area capacitance of the dielectric layer [43,44].…”

Section: Aao Fabrication and Analysismentioning

confidence: 99%

Single-crystalline silicon nanomembrane thin-film transistors with anodized aluminum oxide as a gate dielectric on rigid and flexible substrates

Yang¹,

Geng²,

Wei³

et al. 2022

J. Phys. D: Appl. Phys.

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Flexible integrated circuits (ICs) have gained a lot of attentions in recent years for their emerging application in wearable electronics. Flexible thin-film transistors (TFTs) with low-cost and high-performance are highly desirable as essential and fundamental element for most of the flexible applications. In this paper, we fabricated single-crystalline silicon nanomembrane (SiNM) based TFTs with anodized aluminum oxide (AAO) as dielectric material on glass and flexible plastic substrates. Good quality AAO was obtained on plastic substrates at room temperature. AFM was used for surface morphology of AAO gate dielectric layers on different substrates (i.e. glass, polyethylene terephthalate (PET) and SU-8 coated PET). The electrical characteristics of the AAO gate dielectric layers on different substrates were also analyzed with metal- dielectric-metal (MIM) capacitors. SiNMs were processed with complementary metal oxide semiconductor (CMOS) compatible semiconductor process (e.g. photolithography, ion implantation, thermal annealing, reactive ion etching, metal evaporation, etc.), and then transferred to the substrates with AAO/aluminum stack layers. Performances of transistors on glass and plastic substrates were characterized. Compared with the TFT fabricated on glass substrate, TFT fabricated directly on a PET substrate have lower performance due to poor surface roughness. For optimization of the surface roughness, PET was modified with coating SU-8 photoresist. By this way, TFT had properties close to that on glass substrate. AAO that can be manufactured at room temperature provides a simple and low-cost solution for high-performance flexible single-crystalline SiNM TFTs.

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“…Therefore, high-κ insulators, such as Al 2 O 3 , ZrO 2 [6], and HfO 2 [7], are intensively studied as a replacement. Advantages/disadvantages of dielectric layers, such as SiO 2 , Al 2 O 3 , HfO 2, and HfAlO prepared by atomic layer deposition (ALD) were compared and described by Ramanan et al and also by Qin et al [8,9]. GaN-based devices can be improved provided there is a thorough understanding of III-N surface chemistry and interaction between III-N surfaces and high-κ dielectrics.…”

Section: Introductionmentioning

confidence: 99%

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO₂by atomic layer deposition: leakage current and density of states reduction

Stoklas

Gregušová

Blaho

et al. 2017

Semicond. Sci. Technol.

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The electrical properties of AlGaN/GaN MOSHFETs with HfO 2 prepared by atomic layer deposition with and w/o oxygen-plasma treatment (further referred to as PHf-MOS and Hf-MOS) were investigated. The sub-threshold slope of the MOSHFETs (350 and 150 mV dec −1 for Hf-MOS and PHf-MOS, respectively) were lower than that for HFET (450 mV dec −1 ), which also correspond with lower leakage current of the MOSHFETs (∼10 −8 A mm −1 at −9 V for PHf-MOS). In addition, the density of the interface states at the oxide/GaN-cap layer near the conduction band edge and mid-gap (∼5×10 12 and 2×10 11 cm −2 eV −1 , respectively) after PHf-MOS was lower than that for Hf-MOS (∼3× 10 13 and 2×10 12 cm −2 eV −1 , respectively). From the x-ray photoemission spectroscopy analysis we observed a shift in the Auger Ga LMM peaks (0.6 eV) and an increase of the intensity area of the Ga-O bond in the Ga2p3 spectrum after the oxygen-plasma treatment, mainly because the GaN-cap layer was oxidized and Ga 2 O 3 was formed.

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ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

Cited by 11 publications

References 33 publications

Al₂O₃ Insertion Layer for Improved PEALD SiO₂/(Al)GaN Interfaces

Al₂O₃ Insertion Layer for Improved PEALD SiO₂/(Al)GaN Interfaces

Single-crystalline silicon nanomembrane thin-film transistors with anodized aluminum oxide as a gate dielectric on rigid and flexible substrates

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO₂by atomic layer deposition: leakage current and density of states reduction

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ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

Cited by 11 publications

References 33 publications

Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces

Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces

Single-crystalline silicon nanomembrane thin-film transistors with anodized aluminum oxide as a gate dielectric on rigid and flexible substrates

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2by atomic layer deposition: leakage current and density of states reduction

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Al₂O₃ Insertion Layer for Improved PEALD SiO₂/(Al)GaN Interfaces

Al₂O₃ Insertion Layer for Improved PEALD SiO₂/(Al)GaN Interfaces

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO₂by atomic layer deposition: leakage current and density of states reduction