| This article provides the latest advances from the NSF Advanced Self-powered Systems of Integrated sensors and Technologies (ASSIST) center. The work in the center addresses the key challenges in wearable health and environmental systems by exploring technologies that enable ultra-long battery lifetime, user comfort and wearability, robust medically validated sensor data with value added from multimodal sensing, and access to open architecture data streams. The vison of the ASSIST center is to use nanotechnology to build miniature, selfpowered, wearable, and wireless sensing devices that can enable monitoring of personal health and personal environmental exposure and enable correlation of multimodal sensors. These devices can empower patients and doctors to transition from managing illness to managing wellness and create a paradigm shift in improving healthcare outcomes. This article presents the latest advances in high-efficiency nanostructured energy harvesters and storage capacitors, new sensing modalities that consume less power, low power computation, and communication strategies, and novel flexible materials that provide form, function, and comfort. These technologies span a spatial scale ranging from underlying materials at the nanoscale to body worn structures, and the challenge is to integrate them into a unified device designed to revolutionize wearable health applications.

We present our efforts towards enabling a wearable sensor system that allows for the correlation of individual environmental exposures to physiologic and subsequent adverse health responses. This system will permit a better understanding of the impact of increased ozone levels and other pollutants on chronic asthma conditions. We discuss the inefficiency of existing commercial off-the-shelf components to achieve continuous monitoring and our system-level and nano-enabled efforts towards improving the wearability and power consumption. Our system consists of a wristband, a chest patch, and a handheld spirometer. We describe our preliminary efforts to achieve a sub-milliwatt system ultimately powered by the energy harvested from thermal radiation and motion of the body with the primary contributions being an ultra-low power ozone sensor, an volatile organic compounds sensor, spirometer, and the integration of these and other sensors in a multimodal sensing platform. The measured environmental parameters include ambient ozone concentration, temperature, and relative humidity. Our array of sensors also assesses heart rate via photoplethysmography and electrocardiography, respiratory rate via photoplethysmography, skin impedance, three-axis acceleration, wheezing via a microphone, and expiratory airflow. The sensors on the wristband, chest patch, and spirometer consume 0.83, 0.96, and 0.01 milliwatts respectively. The data from each sensor is continually streamed to a peripheral data aggregation device and is subsequently transferred to a dedicated server for cloud storage. Future work includes reducing the power consumption of the system-on-chip including radio to reduce the entirety of each described system in the sub-milliwatt range.

Charge storage characteristics of ultra-small Pt nanoparticle embedded devices were characterized by capacitance-voltage measurements. A unique tilt target sputtering configuration was employed to produce highly homogenous nanoparticle arrays. Pt nanoparticle devices with sizes ranging from ∼0.7 to 1.34 nm and particle densities of ∼3.3–5.9 × 1012 cm−2 were embedded between atomic layer deposited and e-beam evaporated tunneling and blocking Al2O3 layers. These GaAs-based non-volatile memory devices demonstrate maximum memory windows equivalent to 6.5 V. Retention characteristics show that over 80% charged electrons were retained after 105 s, which is promising for device applications.

In this work, a study has been performed to understand the gradual reset in Al 2 O 3 resistive random-access memory (RRAM). Concentration of vacancies created during the forming or set operation is found to play a major role in the reset mechanism. The reset was observed to be gradual when a significantly higher number of vacancies are created in the dielectric during the set event. The vacancy concentration inside the dielectric was increased using a multi-step forming method which resulted in a diffusion-dominated gradual filament dissolution during the reset in Al 2 O 3 RRAM. The gradual dissolution of the filament allows one to control the conductance of the dielectric during the reset. RRAM devices with gradual reset show excellent endurance and retention for multi-bit storage. Finally, the conductance modulation characteristics realizing synaptic learning are also confirmed in the RRAM.

This paper explores platinum nanoparticle formation during the early stages of growth by atomic layer deposition. Particle size and distribution can be controlled by altering growth parameters. The particles show excellent temperature stability up to 900°C as examined by transmission electron microscopy and in situ heating. Capacitance–voltage and charge retention measurements demonstrate the memory effect in metal-oxide-semiconductor capacitors with embedded nanoparticles. The size, density, charge storage, and temperature stability of the platinum nanoparticles make them attractive for use as charge storage layers for nonvolatile memory devices.

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Reliability of dielectrics is a critical concern inGaN metal-oxide-semiconductor-heterojunction-field-effect transistor (MOS-HFET) devices for use in high-voltage power and RF applications. Accurate characterization of interface traps is essential toward developing an understanding of the reliability issues associated with this system and to evaluate the effectiveness of different dielectrics proposed for use in the gate-stack or the passivation of the access regions. Using small-signal equivalent circuit models and TCAD simulations, it is found that conductance and capacitance methods for trap density estimation potentially have severely constrained detection limits and can probe only shallow traps. In contrast, a pulsed-IV method, used along with UV irradiation, can accurately detect a wide range of trap densities over the entire wide bandgap. The effectiveness of this method is also experimentally demonstrated using an AlGaN/GaN MOS-HFET device with HfAlO gate dielectric.

In order to minimize ac-dc dispersion, reduce gate leakage and maximize ac transconductance, there is a critical need to identify optimal interfaces, low-k passivation dielectrics and high-k gate dielectrics. In this paper, an investigation of different atomic layer deposited (ALD) passivation dielectrics on AlGaN/GaN-based hetero-junction field effect transistors (HFETs) was performed. Angle-resolved x-ray photoelectron spectroscopy revealed that HCl/HF and NH 4 OH cleans resulted in a reduction of native oxide and carbon levels at the GaN surface. The role of high temperature anneals, following the ALD, on the effectiveness of passivation was also explored. Gate-lag measurements on HFETs passivated with a thin ALD high-k Al 2 O 3 or HfAlO layer capped with a thick plasma enhanced chemical vapor deposited (PECVD) low-k SiO 2 layer, annealed at 600-700 • C, were found to be as good as or even better than those with conventional PECVD silicon nitride passivation. Further, it was observed that different passivation dielectric stacks required different anneal temperatures for improved gate-lag behavior compared to the as-deposited case.