Al concentration control of epitaxial AlGaN alloys and interface control of GaN/AlGaN quantum well structures

Abstract

Erratum: "Shortest intersubband transition wavelength (1.68 μ m ) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy" [Appl.

Optimization of nucleation and buffer layer growth for improved GaN quality

“…We studied the influence of oxygen during the nucleation as well as the impact of the reactor pressure and the V-III ratio on the parasitic reactions between group-III source and ammonia [23,24]. With optimized growth conditions for the NL and the GaN buffer, we obtained GaN layers with a smooth and featureless surface along with extremely narrow linewidths in X-ray diffraction and PL.…”

Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy

“…Usually, the Al, In, and Ga incorporations are affected by various growth conditions such as temperature, reactor pressure, flux, and V=III ratio. [12][13][14][15][16] Different reactor structures can also make a big difference. 17) However, if the aforementioned factors are kept the same, the Al, In, and Ga incorporations are still affected by a mismatch of stress between the AlInGaN epilayer and its underlayer during heteroepitaxy.…”

Review—Review of Research on AlGaN MOCVD Growth

“…40 The AlGaN peak had been extremely weak when the pressure exceeded the pressure of 120 torr. Although Choi et al also grew AlGaN layers under the pressure of 200 torr, 41 when Al component in the layer was low as 0.2, it could be barely raised to 0.45 by adjusting the component of the III-Nitride gas. The above phenomenon indicated that the low pressure was favorable for the growth of the AlGaN layer, and the higher the pressure, the more difficult it was to grow.…”

“…5. Choi et al and Allerman et al researched the effect of III-nitride (TMAl +TMGa) flow rate on the Al component in the layer, 41,48 and found that the Al component and growth efficiency of the layer decreased with the rise of the III-nitride flow rate due to enhanced parasitic reactions caused by increasing flow rate of III-nitride. Allerman et al also found that the growth rate increased as the III-nitride flow rate rose.…”