Optimization of nucleation and buffer layer growth for improved GaN quality

Semipolar GaInN quantum well structures on large area substrates

“…1) by another SiO 2 layer by directed sputtering after removing the remaining metal mask in order to suppress any unwanted nucleation in the subsequent growth process. The MOVPE growth of approximately 1 mm GaN was initiated with our standard oxygen doped low temperature AlN nucleation layer [12,13]. A few MOVPE grown samples have been overgrown by hydride vapor phase epitaxy (HVPE) with a GaN layer of about 10 mm thickness under similar conditions as applied for the growth on non-polar aplane templates [14].…”

Simulation supported analysis of the effect of SiNxinterlayers in AlGaN on the dislocation density reduction

“…It was used for comparative WBDF and HRTEM pre-investigations, to prove the developed dislocation model for the pure edge a-type TD in wurtzite group-III nitrides. For both samples the actual layer growth was preceded by the deposition of a low temperature 20 nm thick oxygen doped AlN:O nucleation layer, to improve the crystal quality [8]. Trimethylaluminium/-gallium (TMAl/Ga) and NH 3 were used as group III and V precursors, respectively.…”

Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre‐structured r‐plane sapphire substrates

“…All structures consist of nominally (for planar cplane growth) 20 nm of a low-temperature oxygen doped AlN nucleation layer (NL) [20,21] followed by a single-step GaN growth with variable thickness of nominally 2 mm (sample A) or 3 mm (B,C). The latter were grown in the same run, where additionally some highly (nominally 5 Â 10 19 cm À3 ) Si-doped MLs were inserted to illustrate the growth process [22].…”