Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre‐structured r‐plane sapphire substrates

Schwaiger, Stephan; Metzner, Sebastian; Wunderer, Thomas; Argut, Ilona; Thalmair, Johannes; Lipski, Frank; Wieneke, Matthias; Bläsing, J.; Bertram, F.; Zweck, Josef; Krost, A.; Christen, J.; Scholz, F.

doi:10.1002/pssb.201046336

Cited by 37 publications

(61 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is noted that the samples shown in Figure 7 do not exhibit the dark lines, even though they are visible in with reference to the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) plane is closer to the ideal value of 58.4° [14]. The reduced depth of the trenches is associated with a smaller inclined GaN/sapphire interface and thereby less threading dislocations are generated at the start of the growth.…”

Section: Impact Of Gan Stripe Shape On Defect Developmentmentioning

confidence: 88%

“…As discussed in the next section, a favourable growth condition to achieve a low defect density is to maintain all three facets before coalescence. Under such conditions, most dislocations bent at the very early stage of the growth to the [11][12][13][14][15][16][17][18][19][20] direction will be terminated at voids anyway between the neighbouring GaN stripes.…”

Section: Dislocation Reduction Using a Sin Interlayermentioning

confidence: 99%

“…For the 1050ºC sample, four facets, (0001), (11-22) (×2) and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20), co-exist during the growth of GaN layer 1. In comparison, a lower growth temperature results in a complete absence of the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) facet and a very small (0001) facet. According to the SEM-CL images, a direct benefit from having many different facets formed at a higher growth temperature is a dramatically reduced defect density including both dislocations and BSFs.…”

Section: Impact Of Gan Stripe Shape On Defect Developmentmentioning

confidence: 99%

“…This approach involves an initial growth of GaN along the c-direction followed by a coalescence between adjacent GaN stripes to form a continuous semipolar surface. Previous works have established that a very low defect density can be achieved on semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN layers grown by metal-organic vapour phase epitaxy (MOVPE) on pre-structured r-plane (10)(11)(12) sapphire substrates [7].…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we provide a detailed microstructural characterisation of semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN layers grown by MOVPE on pre-structured r-plane sapphire using transmission electron microscopy (TEM). We focus on the study of the generation and propagation of defects as the growth progresses, and the impact of incorporating a SiN interlayer for dislocation reduction before coalescence and its microstructure on different facets.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire

Han

Caliebe

Hage

et al. 2015

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

The microstructure of semi‐polar (11–22) GaN templates grown on pre‐structured r‐plane sapphire by MOVPE has been characterized by TEM. Cross‐sectional observations indicate that defects are generated in three regions of the layers: threading dislocations at the inclined GaN/sapphire interface, basal plane stacking faults (BSFs) at the c−‐wing, BSFs and threading dislocations at the coalescence between neighboring GaN stripes. An in situ SiN interlayer deposited at an early stage of the growth is shown to be effective in blocking the propagation of dislocations, which is mainly attributed to SiN formed on the c‐plane rather than on the (11–22) plane. Si‐doped marker layers have been used to study the evolution of the growth front before coalescence as a function of temperature. A high growth temperature is associated with the formation of highly faceted GaN stripes. Dislocations originally running along the c‐direction are bent to the [11–20] direction driven by a progressing (11–22) facet. An efficient defect reduction is realized as a result of terminating these dislocations at voids partially defined by the (11–20) facet.

show abstract

Section: Impact Of Gan Stripe Shape On Defect Developmentmentioning

confidence: 88%

Section: Dislocation Reduction Using a Sin Interlayermentioning

confidence: 99%

Section: Impact Of Gan Stripe Shape On Defect Developmentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire

Han

Caliebe

Hage

et al. 2015

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

show abstract

Green light‐emitting diodes fabricated on semipolar (11–22) GaN on r‐plane patterned sapphire substrate

Okada

Uchida

Miyoshi

et al. 2012

Physica Status Solidi (a)

View full text Add to dashboard Cite

Phone/Fax: þ81 836 85 9411We have succeeded in the growth of a high-quality semipolar (11-22) GaN layer on an r-plane patterned sapphire substrate (r-PSS). In this study, we report on green-light-emitting diodes (LEDs) fabricated on the (11-22) GaN layer on the r-PSS. The optical property of (11-22) MQWs on the r-PSS improved from that of the same MQWs on an m-plane sapphire substrate. The green light emission from the LED on the r-PSS was confirmed, which exhibited scattered light emission. The effect of the r-PSS on the improvement of light extraction was evaluated by ray tracing simulation, which is higher than that of a conventional LED on a c-PSS. This improvement is derived from the air void structure in the LED fabricated on the r-PSS. It was also confirmed that the LED had a small blue shift compared with that on the conventional green LED, and that the quantum confined Stark effect can be reduced using the semipolar (11-22) GaN layer on the r-PSS.

show abstract

V-shaped semipolar InGaN/GaN multi-quantum-well light-emitting diodes directly grown on c-plane patterned sapphire substrates

Wang

Hao

Luo

et al. 2017

Phys. Status Solidi A

View full text Add to dashboard Cite

In this paper, we report growth of V‐shaped GaN on c‐plane patterned sapphire substrates (PSS) directly without any masks through a 3‐dimensional (3D) growth. Furthermore, semipolar InGaN/GaN multi‐quantum‐well (MQW) LED is grown on the sidewalls of V‐shaped GaN, with doubled the normal growth time of active region and p‐type region. Through scanning electron microscopy (SEM) and cathodoluminescence (CL) test, two types of semipolar facets are found in V‐pits, {101¯1} and {112¯2}, emitting at 446 and 393 nm, respectively. In photoluminescence (PL), only one strong peak is observed at 441 nm, which corresponds to {101¯1} facets. In addition, two peaks at 448 and 500 nm are observed in electroluminescence (EL) when injection current is low, which are attributed to {101¯1} facets and c‐plane, respectively. However, the peak from {101¯1} facets becomes dominant with the increasing injection current from 3 to 100 mA, whose wavelength has a blue‐shift of only 2 nm.

show abstract

Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre‐structured r‐plane sapphire substrates

Cited by 37 publications

References 24 publications

Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire

Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire

Green light‐emitting diodes fabricated on semipolar (11–22) GaN on r‐plane patterned sapphire substrate

V-shaped semipolar InGaN/GaN multi-quantum-well light-emitting diodes directly grown on c-plane patterned sapphire substrates

Contact Info

Product

Resources

About