We present a transient mathematical model for the sublimation growth of silicon carbide (SiC) single crystals by the physical vapor transport (PVT) method. The model of the gas phase consists of balance equations for mass, momentum, and energy, as well as reaction-diffusion equations. Due to physical and chemical reactions, the gas phase is encompassed by free boundaries. Nonlinear heat transport equations are considered in the various solid components of the growth system. Discontinuous and nonlocal interface conditions are formulated to account for temperature steps between gas and solid as well as for diffuse-gray radiative heat transfer between cavity surfaces. An axisymmetric induction heating model is devised using a magnetic scalar potential. For a nonlinear evolution problem arising from the model, a finite volume scheme is stated, followed by a discrete existence and uniqueness result. We conclude by presenting and analyzing results of transient numerical experiments relevant to the physical growth process.
This article presents a finite volume scheme for transient nonlinear heat transport equations coupled by nonlocal interface conditions modeling diffuse-gray radiation between the surfaces of (both open and closed) cavities. The model is considered in three space dimensions; modifications for the axisymmetric case are indicated. Proving a maximum principle as well as existence and uniqueness for roots to a class of discrete nonlinear operators that can be decomposed into a scalar-dependent sufficiently increasing part and a benign rest, we establish a discrete maximum principle for the finite volume scheme, yielding discrete L∞-L∞a priori bounds as well as a unique discrete solution to the finite volume scheme. We present results of numerical experiments to illustrate the effectiveness of the considered scheme.
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