Advanced Hydrogenation of Dislocation Clusters and Boron-oxygen Defects in Silicon Solar Cells

Hallam, Brett; Hamer, Phillip; Wang, Sisi; Song, Lihui; Nampalli, Nitin; Abbott, Malcolm; Chan, Catherine; Lu, Doris; Wenham, Alison; Mai, Linh; Borojevic, Nino; Li, Alex; Chen, Daniel; Kim, Moonyong; Azmi, Azmeer; Wenham, Stuart

doi:10.1016/j.egypro.2015.07.113

Cited by 88 publications

(49 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Gettering can be used to introduce sinks for fast diffusing metallic impurities, such as Fe, Ni, or Cu, into the noncritical parts of the device . A subsequent technique in the solar cell production chain, hydrogen passivation or hydrogenation for short, passivates part of the metallic impurities and dangling bonds of the crystal lattice near structural defects, resulting in an increased minority carrier lifetime …”

Section: Introductionmentioning

confidence: 99%

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Adamczyk

Søndenå

You

et al. 2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

Wafers from a hybrid silicon ingot seeded in part for High Performance Multicrystalline, in part for a quasi‐mono structure, are studied in terms of the effect of gettering and hydrogenation on their final Internal Quantum Efficiency. The wafers are thermally processed in different groups – gettered and hydrogenated. Afterwards, a low temperature heterojunction with intrinsic thin layer cell process is applied to minimize the impact of temperature. Such procedure made it possible to study the effect of different processing steps on dislocation clusters in the material using the Light Beam Induced Current technique with a high spatial resolution. The dislocation densities are measured using automatic image recognition on polished and etched samples. The dislocation recombination strengths are obtained by a correlation of the IQE with the dislocation density according to the Donolato model. Different clusters are compared after different process steps. The results show that for the middle of the ingot, the gettering step can increase the recombination strength of dislocations by one order of magnitude. A subsequent passivation with layers containing hydrogen can lead to a decrease in the recombination strength to levels lower than in ungettered samples.

show abstract

Section: Introductionmentioning

confidence: 99%

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Adamczyk

Søndenå

You

et al. 2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…• is also shown, along with data using an advanced hydrogenation process from UNSW with accelerated defect formation using elevated illumination intensities (process time less than 10 seconds) [19].…”

Section: Implications Of Accelerated Defect Formation On Hydrogenamentioning

confidence: 98%

“…It should be also noted that all data shown from UNSW is using a process time of 10 seconds or less, applied directly after firing, and hence not necessarily the maximum effectiveness achievable using the given illumination intensity. Using this process, in less than 8 seconds, full avoidance of light-induced degradation has been demonstrated on standard screen printed solar cells with a full area aluminium back surface field [10], [19].…”

Section: Implications Of Accelerated Defect Formation On Hydrogenamentioning

confidence: 99%

Implications of accelerated B-O complex formation for mitigating LID in Czochralski silicon

Hallam

Abbott

Nampalli

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

Self Cite

View full text Add to dashboard Cite

Ahstract-A three-state model is used to explore the influence of the accelerated formation of recombination-active defect com plexes on the mitigation of light-induced degradation in p-type Czochralski silicon. Defect formation is observed to be a critical factor for the speed at which the defects can be hydrogenated. Defect formation also plays a critical role in determining the effectiveness of hydrogenation at elevated temperatures. It is observed that under conventional conditions, at a processing temperature of 200 °e, approximately 100 s are required to form-and hydrogenate 99% of possible defects. The improved effectiveness of the hydrogenation of light-induced defects at elevated temperatures as recently reported on finished standard screen printed solar cells within 8 s is consistent with a substantial acceleration of defect formation.

show abstract

“…Localised laser-based hydrogenation processes were demonstrated by Wilking et al with time-constants for the regeneration reaction on the order of 0.1 s, provided that defects had been pre-formed [105]. A subsequent study using full-area laser-illumination demonstrated the ability to simultaneously form and passivate B-O defects to completely eliminate B-O related LID within ten seconds on standard aluminium back surface field solar cells, in a time-frame suitable for mass production [137,138]. These rapid processes were performed at a temperature of approximately 300 • C, substantially higher than that used for effectively mitigating B-O related LID in previous studies.…”

Section: Rapid Laser-based Processes For Lid Eliminationmentioning

confidence: 99%

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

et al. 2017

Self Cite

View full text Add to dashboard Cite

This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

show abstract

Advanced Hydrogenation of Dislocation Clusters and Boron-oxygen Defects in Silicon Solar Cells

Cited by 88 publications

References 28 publications

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Implications of accelerated B-O complex formation for mitigating LID in Czochralski silicon

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

Contact Info

Product

Resources

About