The fast determination of the spatially resolved series resistance of silicon solar cells from luminescence images is demonstrated. Strong lateral variation of the series resistance determined from luminescence images taken on an industrial screen printed silicon solar cell is confirmed qualitatively by a Corescan measurement and quantitatively by comparison with the total series resistance obtained from the terminal characteristics of the cell. Compared to existing techniques that measure the spatially resolved series resistance, luminescence imaging has the advantage that it is nondestructive and orders of magnitude faster.

No abstract

No abstract

Within the silicon photovoltaics (PV) community, there are many approaches, tools, and input parameters for simulating solar cells, making it difficult for newcomers to establish a complete and representative starting point and imposing high requirements on experts to tediously state all assumptions and inputs for replication. In this review, we address these problems by providing complete and representative input parameter sets to simulate six major types of crystalline silicon solar cells. Where possible, the inputs are justified and up-to-date for the respective cell types, and they produce representative measurable cell characteristics. Details of the modeling approaches that can replicate the simulations are presented as well. The input parameters listed here provide a sensible and consistent reference point for researchers on which to base their refinements and extensions.